TSM8N70
700V N-Channel Power MOSFET
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
700
R
DS(on)
( )
0.85 @ V
GS
=10V
I
D
(A)
4.6
General Description
The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
●
●
●
●
Low R
DS(ON)
0.75 (Typ.)
Low gate charge typical @ 32nC (Typ.)
Low Crss typical @ 13.7pF (Typ.)
Fast Switching
Block Diagram
Ordering Information
Part No.
TSM8N70CI C0
Package
ITO-220
Packing
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 2
Single Pulse Avalanche Energy (Note 1)
Avalanche Current (Repetitive) (Note 1)
Total Power Dissipation @ T
C
= 25 C
Operating Junction Temperature
Storage Temperature Range
Note:
Limited by maximum junction temperature
o
Symbol
V
DS
V
GS
Tc = 25ºC
Tc = 100ºC
I
D
I
DM
E
AS
I
AS
E
AR
I
AR
P
TOT
T
J
T
STG
Limit
700
±30
8
4.8
32
266
8
11.6
8
40
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
mJ
A
W
ºC
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes:
Surface mounted on FR4 board t
≤
10sec
Symbol
RӨ
JC
RӨ
JA
Limit
3.1
62.5
Unit
o
o
C/W
C/W
1/8
Version: A10
TSM8N70
700V N-Channel Power MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Dynamic
b
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 4A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 700V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= 10V, I
D
= 4A
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
700
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.75
--
--
--
11
32
9
8
2006
148
13.7
23
69
144
77
--
--
--
420
4.2
Max
--
0.85
4.0
1
±10
--
--
--
--
--
--
--
--
--
--
--
8
32
1.4
--
--
Unit
V
V
uA
uA
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
V
DS
= 560V, I
D
= 8A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristic
Source Current
Source Current (Pulse)
Diode Forward Voltage
Reverse Recovery Time
Integral reverse diode in
the MOSFET
I
S
= 8A, V
GS
= 0V
V
GS
= 0V, I
S
=8A,
V
GS
= 10V, I
D
= 10A,
V
DD
= 300V, R
G
=25
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
fr
nS
A
A
V
nS
uC
dI
F
/dt = 100A/us
Reverse Recovery Charge
Q
fr
--
Note 1:
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2:
V
DD
= 50V, I
AS
=8A, L=7.74mH, R
G
=25 , Starting T
J
=25ºC
Note 3:
Pulse test: pulse width
≤300uS,
duty cycle
≤2%
Note 4:
Essentially Independent of Operating Temperature
2/8
Version: A10
TSM8N70
700V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
E
AS
Test Circuit & Waveform
3/8
Version: A10
TSM8N70
700V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/8
Version: A10
TSM8N70
700V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5/8
Version: A10
嵌入式系统
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