TSM2303
30V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m )
180 @ V
GS
=-10V
-30
300 @ V
GS
=-4.5V
I
D
(A)
-1.3
-1.1
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Portable Devices
High Speed Switch
Ordering Information
Part No.
TSM2303CX RFG
Package
SOT-23
Packing
3Kpcs / 7” Reel
P-Channel MOSFET
Note:
“G” denotes Halogen Free Product.
Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
T
A
=25 C
T
A
=75 C
Limit
-30
±20
-1.3
-10
-1.3
0.7
Unit
V
V
A
A
A
W
0.45
+150
-55 to +150
o
o
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
2
b. Surface Mounted on a 1 in pad of 2oz Cu, t
≤
5 sec.
Symbol
RӨ
JC
RӨ
JA
Limit
80
140
Unit
o
o
C/W
C/W
1/6
Version: A11
TSM2303
30V P-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
b.c
a
Conditions
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= -30V, V
GS
= 0V
V
GS
= -10V, I
D
= -1.3A
V
GS
= -4.5V, I
D
= -1.1A
V
DS
= -15V, I
D
= -1.3A
I
S
= -1.3A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Min
-30
-1
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
150
250
5
--
10
1.9
2
565
126
75
10
9
27
7
Max
--
-3
±100
1.0
180
300
--
-1.2
15
--
--
--
--
--
--
--
--
--
Unit
V
V
nA
µA
m
S
V
V
DS
= -10V, I
D
= -1.3A,
V
GS
= -4.5V
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= -10V, R
L
= 15 ,
I
D
= -1A, V
GEN
= -4.5V,
nS
R
G
= 6
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/6
Version: A11
TSM2303
30V P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A11
TSM2303
30V P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Capacitance
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A11
TSM2303
30V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
03
= Device Code
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/6
Version: A11
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