TSM1N60L
600V N-Channel Power MOSFET
TO-252
TO-251
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
600
R
DS(on)
( )
12 @ V
GS
=10V
I
D
(A)
1
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a
fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
Block Diagram
Features
●
●
●
●
●
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
I
DSS
and V
DS(on)
specified at elevated temperature
Ordering Information
Part No.
TSM1N60LCP RO
TSM1N60LCH C5
Package
TO-252
TO-251
Packing
2.5Kpcs / 13” Reel
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
EAS
P
DTOT
dv/dt
T
J
T
J
, T
STG
Limit
600
±30
1
4
1
20
30
3
+150
-55 to +150
Unit
V
V
A
A
A
mJ
W
V/ns
o
o
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25 )
Maximum Power Dissipation @T
C
=25 C
Peak Diode Recovery Voltage Slope
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Notes:
1. Pulse width limited by safe operating area
2. ISD≤1A, di/dt≤100A/us, VDD≤BV
DSS
, T
J
<=T
JMAX
o
C
C
1/7
Version: B07
TSM1N60L
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Thermal Resistance – Junction to Case
Thermal Resistance - Junction to Ambient
2
Notes:
Surface mounted on FR4 board of 1 in , 2oz Cu, t
≤
10sec
Symbol
T
L
RӨ
JC
RӨ
JA
Limit
10
4.16
100
Unit
S
C/W
o
C/W
o
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
600
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
10.5
--
--
--
10
--
8.5
1.8
4
210
28
4.2
8
21
18
24
Max
--
12
4.0
10
± 100
--
1.5
14
--
--
--
--
--
--
--
--
--
Unit
V
V
uA
nA
S
V
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 0.6A
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
I
DSS
Gate Body Leakage
V
GS
= ±20V, V
DS
= 0V
I
GSS
Forward Transconductance
V
DS
≧50V,
I
D
= 0.5A
g
fs
Diode Forward Voltage
I
S
= 1A, V
GS
= 0V
V
SD
b
Dynamic
Total Gate Charge
Q
g
V
DS
= 400V, I
D
= 1A,
Gate-Source Charge
Q
gs
V
GS
= 10V
Gate-Drain Charge
Q
gd
Input Capacitance
C
iss
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
oss
f = 1.0MHz
Reverse Transfer Capacitance
C
rss
b,c
Switching
Turn-On Delay Time
t
d(on)
Turn-On Rise Time
t
r
V
GS
= 10V, I
D
= 1A,
V
DS
= 300V, R
G
= 6
Turn-Off Delay Time
t
d(off)
Turn-Off Fall Time
t
f
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. For design reference only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
nC
pF
nS
2/7
Version: B07
TSM1N60L
600V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: B07
TSM1N60L
600V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/7
Version: B07
TSM1N60L
600V N-Channel Power MOSFET
TO-252 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
G1
G2
H
I
J
K
L
M
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.290 BSC
0.090 BSC
4.600 BSC
0.180 BSC
7.000
7.200
0.275
0.283
6.000
6.200
0.236
0.244
6.400
6.604
0.252
0.260
2.210
2.387
0.087
0.094
0.010
0.127
0.000
0.005
5.232
5.436
0.206
0.214
0.666
0.889
0.026
0.035
0.633
0.889
0.025
0.035
0.508 REF
0.020 REF
0.900
1.500
0.035
0.059
2.743 REF
0.108 REF
0.660
0.940
0.026
0.037
1.397
1.651
0.055
0.065
1.100 REF
0.043 REF
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/7
Version: B07
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