TSD882
Low Vcesat NPN Transistor
TO-126
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
50V
50V
3A
0.5V @ I
C
/ I
B
= 2A / 200mA
Features
●
●
Low V
CE(SAT)
0.25 @ I
C
/ I
B
= 2A / 200mA (Typ.)
Complementary part with TSB772
Ordering Information
Part No.
TSD882CK B0
TSD882CK B0G
Package
TO-126
TO-126
Packing
250pcs / Bulk
250pcs / Bulk
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw≤350us, Duty≤2%
DC
Pulse
Ta = 25 C
Tc = 25 C
o
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
50
50
5
3
7 (note)
1
10
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 3V, I
C
= 0
I
C
/ I
B
= 2A / 200mA
I
C
/ I
B
= 2A / 200mA
V
CE
= 2V, I
C
= 1A
V
CE
=6V, I
C
=50mA,
f=100MHz
V
CB
= 10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(SAT)
*V
BE(SAT)
*h
FE
f
T
Cob
Min
60
50
5
--
--
--
--
100
--
--
Typ
--
--
--
--
--
0.25
--
--
90
45
Max
--
--
--
1
1
0.5
2
500
--
--
Unit
V
V
V
uA
uA
V
V
MHz
pF
* Pulse Test: Pulse Width
≤380uS,
Duty Cycle≤2%
1/4
Version: B11
TSD882
Low Vcesat NPN Transistor
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
v.s. Ic
Figure 3. V
BE(SAT)
v.s. Ic
Figure 4. Power Derating Curve
2/4
Version: B11
TSD882
Low Vcesat NPN Transistor
TO-126 Mechanical Drawing
DIM
∝1
∝2
∝3
∝4
A
B
C
D
E
F
G
H
I
J
K
L
M
TO-126 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
3ºC
--
3ºC
--
3ºC
3ºC
--
--
3ºC
3ºC
--
--
3ºC
3ºC
--
--
0.150
0.153
3.81
3.91
0.275
0.279
6.99
7.09
0.531
0.610
13.50
15.50
0.285
0.303
7.52
7.72
0.034
0.041
0.95
1.05
0.028
0.031
0.71
0.81
0.048
0.052
1.22
1.32
0.170
0.189
4.34
4.80
0.095
0.105
2.41
2.66
0.045
0.055
1.14
1.39
0.045
0.055
1.14
1.39
--
0.021
--
0.55
0.137
0.152
3.50
3.86
3/4
Version: B11
TSD882
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: B11
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