TSD1664
Low Vcesat NPN Transistor
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
32V
40V
1A
0.15V @ I
C
/ I
B
= 500mA / 50mA
Features
●
●
Low V
CE(SAT)
0.15V @ I
C
/ I
B
= 500mA / 50mA (Typ.)
Complementary part with TSB1132
Ordering Information
Part No.
TSD1664CY RM
TSD1664CY RMG
Package
SOT-89
SOT-89
Packing
1Kpcs / 7” Reel
1Kpcs / 7” Reel
Structure
●
●
Epitaxial Planar Type
NPN Silicon Transistor
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=20ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
40
32
5
1
2 (note1)
0.5
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
h
FE
values are classified as follows:
Rank
Q
R
h
FE
120~270
180~390
Conditions
I
C
= 50uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50uA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
/ I
B
= 500mA / 50mA
V
CE
= 3V, I
C
= 100mA
V
CE
=5V, I
C
=-50mA,
f=100MHz
V
CB
= 10V, I
E
= 0, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
40
32
5
--
--
--
120
50
--
Typ
--
--
--
--
--
0.15
--
150
10
Max
--
--
--
0.5
0.5
0.4
390
--
20
Unit
V
V
V
uA
uA
V
MHz
pF
1/4
Version: B07
TSD1664
Low Vcesat NPN Transistor
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
v.s. Ic
Figure 3. Transition Frequency v.s. I
E
Figure 4. Collector Output Capacitance vs. Vcb
2/4
Version: B07
TSD1664
Low Vcesat NPN Transistor
SOT-89 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
SOT-89 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.40
4.60
0.173
0.181
1.50
1.7
0.059
0.070
2.30
2.60
0.090
0.102
0.40
0.52
0.016
0.020
1.50
1.50
0.059
0.059
3.00
3.00
0.118
0.118
0.89
1.20
0.035
0.047
4.05
4.25
0.159
0.167
1.4
1.6
0.055
0.068
0.35
0.44
0.014
0.017
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan,
B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
X
= hFE rank code
3/4
Version: B07
TSD1664
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: B07
嵌入式系统
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