SML400HB01MF
Attributes:
-aerospace build standard
-high reliability
-lightweight
-metal matrix base plate
-AlN isolation
-Mosfet module
Maximum rated values/Electrical Properties
Source-drain voltage V
DSS
DC Collector Current I
D25
Repetitive peak Drain Current
Total Power Dissipation
Tj=25C to 175C
Rgs=1MΩ
Tc=25C
Tc=25C,Tvj=175C
tp=1msec,Tc=80C
Tc=25C
V
DSS
I
c
, nom
Ic
I
crm
P
tot
100
400
400
600
1700
V
A
A
W
Gate-emitter peak voltage
Repetitive Peak
Forward Current
Isolation voltage
Continuous
Transient
tp=1msec
RMS, 50Hz, t=1min
V
GS
I
frm
V
isol
MIN
TYP
+/-20
=/-30
600
2500
MAX
V
V
A
V
Drain-source breakdown
voltage
Gate Threshold voltage
I
D
=250µA,V
GS
=0V,
Tc=25C
I
D
=8mA,V
DS
=V
GS
, Tvj=25C
BV
DSS
100
V
Vge
(th)
3.0
15200
5800
1720
470
100
270
1
5
V
pF
pF
pF
nC
nC
nC
f=1MHz,Tvj=25C,Vgs=0V,V
DS
=0V
Tvj=25C,V
DS
=0.5V
DSS
,ID=0.5I
D25,
V
GS
=10V
Gate-source leakage
current
Drain source leakage
current
V
GS
=+/-20V,
V
GS
=0V,Tvj=25C
V
DS
=V
GS
=20V,
Tvj=25C
Tvj=150C
Tvj=175C
I
GSS
+/-200
nA
I
DSS
25
1
5
µA
mA
mA
gfs
Vgs=10V, I
D
=0.5I
D25
Ic=120A,V
DS
=0.5VDSS,V
GS
=10
V Rge=3.3Ω,L=30nH
Tvj=25C
60
97
50
60
150
90
S
ns
ns
Ns
ns
Stray Module inductance
Terminal-chip resistance
L
σce
R
c
30
1.0
nH
mΩ
Source –Drain Diode characteristics
DC Forward Diode
Current Is
Repetitive forward current
TYP
MAX
T
c
=25C V
GS
=0V
I
s
Ism
400
800
A
A
I
F
=I
S
, V
GS
=0V
t
P
=300µsec, duty cycle=2%
Peak reverse recovery current
If=50A, -di/dt=100A/µsec
V
R
=50V,Vgs=0V,Tvj=25C
Reverse recovery time
If=50A, -di/dt=100A/µsec
Vr=50V,Vgs=0V,Tvj=25C
Recovered charge
If=50A, -di/dt=100A/µsec
Vr=50V,Vgs=0V,Tvj=25C
V
SD
1.5
V
I
rm
12
A
trr
300
ns
Qrm
0.8
µC
Thermal Properties
Thermal resistance junction to
case
Thermal resistance case to
heatsink
Maximum junction temperature
Maximum operating temperature
Storage Temperature
Igbt
Diode
R
θJ-C
R
θC-hs
Tvj
Top
Tstg
Min
Typ
Max
0.09
0.11
K/W
0.03
175
-55
-55
175
175
K/W
C
C
C
400
300
200
100
0
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