SML150FB12
Attributes:
-aerospace build standard
-high reliability
-lightweight
-metal matrix base plate
-AlN isolation
Maximum rated values/Electrical Properties
Collector-emitter Voltage
DC Collector Current
Repetitive peak Collector Cur-
rent
Total PowerDissipation
Tc=70C, Tvj=175C
Tc=25C,Tvj=175C
tp=1msec,Tc=80C
Tc=25C
Vce
1200
150
200
300
850
V
A
A
W
I
c
, nom
Ic
I
crm
P
tot
Gate-emitter peak voltage
DC Forward Diode
Current
Repetitive Peak
Forward Current
I
2
t value per diode
tp=1msec
Vr=0V, tp=10msec,
Tvj=125C
RMS, 50Hz, t=1min
V
ges
I
f
I
frm
+/-20
150
300
V
A
A
I
2t
V
isol
4600
2500
A
2
sec
V
Isolation test voltage
Collector-emitter saturation
voltage
Gate Threshold voltage
Input capacitance
Reverse transfer Capacitance
Collector emitter cut off
current
Gate emitter cut off current
Ic=150A,Vge=15V, Tc=25C
Ic=150A,Vge=15V,Tc=125C
Ic=6.4mA,Vce=Vge, Tvj=25C
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
Vce=600V,Vge=0V,Tvj=25C
Vce=600V,Vge=0V,Tvj=125C
Vce=0V,Vge=20V,Tvj=25C
V
ce(sat)
1.70
2.0
5.0
5.8
10.5
0.5
1
1
2.15
V
V
V
nF
nF
Vge
(th)
C
ies
C
res
I
ces
I
ges
6.5
5
400
mA
mA
nA
Turn on delay time
Ic=150A, Vcc=600V
Vge=+/15V,Rg=8.2Ω,Tvj=25C
Vge=+/-15V,Rg=8.2Ω,Tvj=125C
Ic=150A, Vcc=600V
Vge=+/-15V,Rg=8.2Ω,Tvj=25C
Vge=+/-15V,Rg=8.2Ω,Tvj=125C
Ic=150A, Vcc=600V
Vge=+/-15V,Rg=8.2Ω,Tvj=25C
Vge=+/-15V,Rg=8.2Ω,Tvj=125C
Ic=150A, Vcc=600V
Vge=+/-15V,Rg=8.2Ω,Tvj=25C
Vge=+/-15V,Rg=8.2Ω,Tvj=125C
Ic=150A,Vce=600V,Vge=15V
Rge=8.2Ω,L=80nH
Tvj=125C
t
d,on
250
300
nsec
nsec
Rise time
tr
90
100
nsec
nsec
Turn off delay time
t
d
,
off
550
650
nsec
nsec
Fall time
t
f
130
160
11
nsec
nsec
mJ
Turn energy loss per pulse
E
on
Turn off energy loss per pulse Ic=150A,Vce=600V,Vge=15V
Rge=8.2Ω,L=80nH
Tvj=125C
SC Data
tp≤10µsec, Vge≤15V Vcc=900V,
Vce
(max)=
Vces-Lσdi/dt Tvj=125C
E
off
I
sc
L
σce
R
c
24
600
40
1.2
mJ
A
nH
mΩ
Stray Module inductance
Terminal-chip resistance
Diode characteristics
Forward voltage
Ic=150A,Vge=0V, Tc=25C
Ic=150A,Vge=0V, Tc=125C
V
f
1.65
1.65
110
140
15
28
7.0
14
2.1 V
V
A
A
µC
µC
mJ
mJ
Peak reverse recovery current If=150A, -di/dt=1500A/µsec
Vce=600V,Vge=-15V,Tvj=25C
Vce=600V,Vge=-15V,Tvj=125C
Recovered charge
If=150A, -di/dt=1500A/µsec
Vce=600V,Vge=-15V,Tvj=25C
Vce=600V,Vge=-15V,Tvj=125C
If=150A, -di/dt=1500A/µsec
Vce=600V,Vge=-10V,Tvj=25C
Vce=600V,Vge=-10V,Tvj=125C
I
rm
Qr
Reverse recovery energy
E
rec