SML1310IGF
MECHANICAL DATA
Dimensions in mm (inches)
10.40
10.80
3.0
4.50
4.81
0.75
0.95
3.50
Dia.
3.70
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DS
I
D(max)
R
DS(on)
FEATURES
0.75
0.85
16.30
16.70
10.50
10.67
1 2 3
À
2.1
max.
Á
1.0 dia.
3 places
20 Min.
100V
18A
Ω
.044Ω
2.54
BSC
2.65
2.96
• HERMETICALLY SEALED TO257 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
TO257 Flexilead – Metal Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
T
L
R
θJC
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
±20V
18A
18A
72A
100W
0.8W/°C
–55 to 150°C
300°C
1.25°C/W max.
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6027
Issue 1
SML1310IGF
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
STATIC ELECTRICAL RATINGS
Parameter
BV
DSS
Drain – Source Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
I
GSS
I
GSS
I
DSS
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain Current
Test Conditions
V
GS
= 0
V
DS
= V
GS
V
GS
≤
20V
V
GS
= -20V
V
DS
= 100V,V
GS
= 0V
V
DS
= 80V, V
GS
= 0V
T
C
= 125°C
I
D
= 250µA
I
D
= 250µA
Min.
100
2.0
Typ.
Max.
4.0
100
-100
25
250
Unit
V
nA
µA
R
DS(on)
Static Drain – Source On–State
Resistance1
G
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
DYNAMIC CHARACTERISTICS
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
V
GS
= 10V
I
D
= 18A
0.44
Ω
V
DS
= 25V
V
GS
= 0V
V
DS
= 25V
F = 1MHz
V
DD
=
50V
RG = 3.6Ω
I
D
= 18A
14
1872
463
234
19
S
pF
I
D
= 18A
V
GS
=10V
85
65
54
ns
I
S
I
SM
V
SD
t
rr
Qrr
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Modified MOSPOWER
,
(Body Diode)
Source Current1 (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
smbol showing
the integral P-N
Junction rectifier
5
/
18
A
72
1.3
270
1.8
V
ns
µc
I
S
= 18A ,V
GS
= 0V, T
C
= 25°C
T
J
= 25°C
di / dt
=
100A/µs
I
F
=18A
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6027
Issue 1
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