SML09GB22U2C
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 )
M a x .
1
3
2
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
COMMON CATHODE
SCHOTTKY DIODES IN
HERMETIC CERAMIC
SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY
APPLICATIONS
0 .7 6
(0 .0 3 0 )
m in .
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
PACKAGE SMD1 (TO-276AB)
Underside View
PAD 1 — Anode 1 PAD 2 — Cathode PAD 3 — Anode 2
ABSOLUTE MAXIMUM RATINGS
(T
c
= 25°C unless otherwise stated)
V
RRM
I
FAV
I
FSM
Repetitive Peak Reverse Voltage
Average
Forward Current T
C
= 25°C
T
C
= 90°C
Maximum Surge Forward Current
T
vj
= 45 °C; t
p
= 10ms (50Hz), sine
Virtual Junction Temperature
Storage Temperature Range
T
C
=
25°C
Thermal Characteristics
220V
12A per side
9A per side
20A
-55 + 175°C
-55 + 150°C
78W
1.6°C/W
T
vj
T
stg
P
tot
R
thjc
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
I
R*
V
F*
C
J
Reverse Current
Forward Voltage
Capacitance
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
Test Conditions
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 5A
I
F
= 5A
V
R
= 100V
V
R
= V
RRM
V
R
= V
RRM
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
Min.
Typ.
1.3
1.3
Max.
1.3
Unit
mA
V
P
F
1.2
18
1.5
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2853
Issue 2
SML09GB22U2C
FIG. 1 TYP. FORWARD CHARCTERISTICS
FIG. 2 TYP. JUNCTION CAPACITY VERSUS
BLOCKING VOLTAGE
NOTE:
Explanatory comparison for the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes.
Rectifier Diode
Conduction
forward characteristics
turn off characteristics
by majority + minority carriers
V
F
(I
F
)
extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
delayed saturation leads to V
FR
GaAs Schottky Didoe
by majority carriers only
V
F
(I
F
), See Fig 1
reverse current charges
junction capacity C
j
, see Fig 2;
not temperature dependant
no turn on overvoltage peak.
turn on characteristics
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2853
Issue 2
微控制器 MCU
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