AlGaInP Yellow LED chip
Features:
(1) High luminous intensity
(2) Long operation life
(3) 100% probing test
(4) Low driving current applications
Type:
709SYS-R-AU
unit: mil
0.9
2.05
4
Characteristics:
(1) Size
Chip Size: 9 mil x 9 mil (230±25 µm x 230±25 µm)
Chip Thickness: 7 mil (180±25 µm) typical
Bonding Pad: 4 mil (102±10 µm) in diameter
(2) Metallization:
P electrode
：
Au alloy
N electrode
：
Au alloy
(3) Structure:
Refer to drawing
8 9
P-electrode
AlGaInP epilayers
n-GaAs sub.
N-electrode
7
Electro-optical characteristics:
Parameter
Forward voltage
Reverse voltage
Dominant wavelength
(1)
Spectra half-width
Luminous intensity
(2)(3)
I
v
Symbol
V
f1
V
f2
V
r
λ
d
Δλ
D
D1
E
F
Condition
I
f
= 10uA
I
f
= 20mA
I
r
=10uA
I
f
= 20mA
I
f
= 20mA
I
f
=20mA
Min.
1.30
10
582
---
50
60
70
80
Typ.
---
2.0
---
587
13
2.4
592
---
Max.
Unit
V
V
V
nm
nm
mcd
(1) Basically, wavelength uniformity is
λ
d
±
5nm; however, customers’ special requirements are also welcome.
(2) Customer’s special requirements are also welcome.
(3) Luminous intensity is measured by
EPISTAR’s
equipment on bare chips.
Hints:
Bonding temperature => Do not apply over 280
℃
on chip for 10 seconds.
CC-200609-B
This product is made and sold under one or more of the following patents: Taiwan Patent Certificate Nos.: 098998; 113696; 128153; 131010; 144415;
148677; 170789; 183481; 183846; U.S. Patent Nos.: 5,008,718; 5,164,798; 5,233,204; 5,789,768; 6,078,064; 6,057,562; 6,225,648; 6,552,367;
6,876,005, and any foreign counterparts.
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