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MG6330

产品描述SILICON EPITAXIAL PLANAR NPN TRANSISTOR
文件大小578KB,共4页
制造商SEME-LAB
官网地址http://www.semelab.co.uk
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MG6330概述

SILICON EPITAXIAL PLANAR NPN TRANSISTOR

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SILICON EPITAXIAL
PLANAR NPN TRANSISTOR
MG6330, MG6330-R
TO-3P Plastic Package
Complimentary PNP – MG9410
Designed specifically for audio power amplifier applications
High Current audio bipolar with wide Safe Operating Area
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
MG6330
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TA = 25°C
Total Power Dissipation at
Maximum Junction Temperature
Storage Temperature Range
230V
230V
MG6330-R
260V
260V
5V
15A
4A
200W
150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
0.63
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9116
Issue 2
Page 1 of 4
Website:
http://www.semelab-tt.com

MG6330相似产品对比

MG6330 MG6330-R
描述 SILICON EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR NPN TRANSISTOR

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