• Load Switch and Charger Switch for Portable Devices
• DC/DC Converter
S
1
D
D
D
S
4
S
2.05 mm
D
G
2
3
Marking Code
G
BPX
Part # code
0.6 mm
6
XXX
Lot traceability
and Date code
D
5
2.05 mm
Ordering Information:
SiA429DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
- 20
±8
- 12
a
- 12
a
- 10.6
b, c
- 8.5
b, c
- 30
- 12
a
- 2.9
b, c
19
12
3.5
b, c
2.2
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
A
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
b, f
R
thJA
t
5s
28
36
Maximum Junction-to-Ambient
°C/W
R
thJC
5.3
6.5
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 6 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 2 A
V
GS
= - 1.8 V, I
D
= - 2 A
V
GS
= - 1.5 V, I
D
= - 1 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 8.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 8.5 A, V
GS
= 0 V
- 0.8
35
18
13
22
T
C
= 25 °C
- 12
- 30
- 1.2
60
30
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 1.2
I
D
- 8.5 A, V
GEN
= - 8 V, R
g
= 1
V
DD
= - 10 V, R
L
= 1.2
I
D
- 8.5 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
1.3
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 10 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 10 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
1750
270
240
41
24.5
2.4
6.7
6.3
22
25
70
25
10
10
80
25
13
35
40
105
40
15
15
120
40
ns
62
37
nC
pF
g
fs
V
DS
= - 10 V, I
D
= - 6 A
- 20
0.0170
0.022
0.029
0.038
30
0.0205
0.027
0.036
0.060
S
- 0.4
- 20
- 12
2.7
-1
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 5 V thru 2 V
25
I
D
- Drain Current (A)
I
D
- Drain Current (A)
20
16
20
12
15
V
GS
= 1.5 V
8
T
C
= 25 °C
10
5
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4
T
C
= 125 °C
T
C
= - 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.08
V
GS
= 1.5 V
0.07
R
DS(on)
- On-Resistance (Ω)
Transfer Characteristics
3500
3000
C - Capacitance (pF)
V
GS
= 1.8 V
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
2500
2000
1500
1000
C
oss
500
C
rss
0
0
5
10
15
20
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
1.65
V
DS
= 5 V
1.45
V
DS
= 10 V
V
DS
= 16 V
R
DS(on)
- On-Resistance
6
V
GS
= 4.5 V; 2.5 V; I
D
= 6 A
(Normalized)
1.25
4
1.05
V
GS
= 1.8 V; I
D
= 6 A
V
GS
= 1.5 V; I
D
= 1 A
2
0.85
0
0
10
20
30
40
50
0.65
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.06
I
S
- Source Current (A)
T
J
= 150 °C
10
R
DS(on)
- On-Resistance (Ω)
0.05
I
D
= 1 A; T
J
= 125 °C
0.04
I
D
= 6 A; T
J
= 125 °C
0.03
I
D
= 6 A; T
J
= 25 °C
0.02
I
D
= 1 A; T
J
= 25 °C
T
J
= 25 °C
1
0.1
0.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
0.8
30
On-Resistance vs. Gate-to-Source Voltage
0.7
25
0.6
Power (W)
V
GS(th)
(V)
20
I
D
= 250 μA
0.5
15
0.4
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
20
25
Power Dissipation (W)
15
I
D
- Drain Current (A)
20
15
Package Limited
10
10
5
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67038
S11-0649-Rev. B, 11-Apr-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
与云数据库相比，小型计算机是专门为网络边缘的去中心化坚固计算而构建的。通过将应用程序、分析和处理服务移动到更靠近数据生成源的位置，业务运营可以获得改进的实时计算应用程序性能。 l 从奔腾到酷睿i5的可扩展CPU性能 l 智能电源点火管理和CAN总线网络支持 l 无线局域网和广域网LTE连接 l 丰富的I/O可扩展性，包括PoE、PCI、PCIe、COM l 适用于宽工作温度和宽电压输入的坚固...[详细]
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
