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MPSA55_11

产品描述PNP Silicon Amplifier Transistor
文件大小208KB,共2页
制造商MCC
官网地址http://www.mccsemi.com
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MPSA55_11概述

PNP Silicon Amplifier Transistor

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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MPSA55
MPSA56
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 80V
Operating and storage junction temperature range: -55
O
C to +150
O
C
PNP Silicon
Amplifier Transistor
TO-92
A
E
Marking:MPSA55,MPSA56
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
T
STG
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation @T =25
O
C
A
Derate above 25
O
C
Total Device Dissipation @T =25
O
C
A
Derate above 25
O
C
Junction Temperature
Storage Temperature
O
Rating
80
80
4.0
500
625
5.0
1.5
12
-55 to +150
-55 to +150
Min
Max
Unit
V
V
V
mA
mW
mW/
O
C
W
mW/
O
C
O
C
O
C
Units
B
C
Electrical Characteristics @ 25 C Unless Otherwise Specified
Parameter
Collector-Emitter Breakdown Voltage
(1)
(I
C
=1.0mAdc, I
B
=0)
MPSA55
MPSA56
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CE
=60Vdc, I
B
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0)
MPSA55
(V
CB
=80Vdc, I
E
=0)
MPSA56
(1)
OFF CHARACTERISTICS
V
(BR)CEO
60
80
4.0
0.1
Vdc
Vdc
uAdc
D
V
(BR)EBO
I
CES
I
CBO
0.1
0.1
uAdc
G
E
B
C
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(on)
DC Current Gain
(I
C
=10mAdc, V
CE
=1.0Vdc)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, V
CE
=1.0Vdc)
100
100
0.25
1.2
Vdc
Vdc
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.096
DIMENSIONS
MM
MAX
.190
.190
.590
.020
.160
.104
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
Current-Gain – Bandwidth Product
(3)
(I
C
=100mAdc, V
CE
=1.0Vdc,
50
f=100MHz)
MPSA55
MPSA56
Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
MHz
1.
2.
www.mccsemi.com
Revision:
A
1 of 2
2011/01/01

 
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