HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Typical Applications
The HMC256 is ideal for:
• Microwave Radio & VSAT
Features
High Image Rejection: >30 dB
Input IP3: +18 dB
Wideband IF: DC to 1.5 GHz
Die Size: 1.6 x 1.3 x 0.1 mm
3
MIXERS - I/Q MIXERS / IRM - CHIP
• Test Instrumentation
• Military Radios Radar & ECM
• Space
Functional Diagram
General Description
The HMC256 chip is a compact, 2.08 mm
2
, I/Q Mixer
MMIC which can be used as an Image Reject Mixer
(IRM) or Single Sideband (SSB) upconverter. The
chip utilizes two standard Hittite double-balanced
mixer cells and a Lange Coupler realized in GaAs
MESFET technology. All data is with the chip in a
50 Ohm test fixture connected via 0.025 mm (1 mil)
diameter wire bonds of minimal length <0.51 mm (<20
mils). A low frequency quadrature hybrid was used
to interface the MMIC IF ports to a 120 MHz IF USB
output. This provides an example of the I/Q Mixer
in an IRM application. The IF may be used from DC
to 1.5 GHz. This I/Q Mixer is a more reliable, much
smaller replacement to hybrid drop-in style I/Q Mixer
assemblies.
Electrical Specifi cations,
T
A
= +25° C, As an IRM
Parameter
Min.
Frequency Range, RF
Frequency Range, LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
Image Rejection (IR)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
1 dB Gain Compression (Input)
24
22
27
24
IF = 70 - 200 MHz
LO = +18 dBm
Typ.
5.9 - 12
5.7 - 12
DC - 1.5
8
8
32
30
35
30
18
5
10.5
10.5
20
22
27
24
Max.
Min.
IF = 70 - 200 MHz
LO = +15 dBm
Typ.
7.1 - 11.7
6.9 - 11.7
DC - 1.5
8
8
30
30
35
30
17
5
10.5
10.5
Max.
GHz
GHz
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
Units
3-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Conversion Gain to Desired Sideband
vs. Temperature @ LO = +15 dBm,
IF = 120 MHz USB
0
CONVERSION GAIN (dB)
Conversion Gain to Desired Sideband
vs. LO Drive, IF = 120 MHz USB
0
-5
CONVERSION GAIN (dB)
-5
3
LO = +12 dBm
LO = +14 dBm
LO = +16 dBm
LO = +18 dBm
-10
-10
-15
-40C
+25C
+85C
-15
-20
5
6
7
8
9
10
11
12
13
FREQUENCY (GHz)
-20
5
6
7
8
9
10
11
12
13
RF FREQUENCY (GHz)
Image Rejection vs. Temperature
LO = +15 dBm, IF = 120 MHz USB
50
Image Rejection vs.
LO Drive, IF = 120 MHz USB
50
IMAGE REJECTION (dB)
30
IMAGE REJECTION (dB)
40
40
30
20
-30C
+25C
+85C
20
- 12 dBm
- 14 dBm
- 16 dBm
- 18 dBm
10
10
0
5
6
7
8
9
10
11
12
13
RF FREQUENCY (GHz)
0
5
6
7
8
9
10
11
12
13
RF FREQUENCY (GHz)
Return Loss @ LO = +15 dBm
0
-5
RETURN LOSS (dB)
-10
Isolations @ LO = +15 dBm
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
RF/IF
LO/IF
LO/RF
-15
-20
-25
-30
-35
-40
5
6
7
8
9
10
11
12
13
FREQUENCY (GHz)
RF
LO
5
6
7
8
9
10
11
12
13
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-3
MIXERS - I/Q MIXERS / IRM - CHIP
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
IF Bandwidth @ LO = 15 dBm
IF CONVERSION GAIN & RETURN LOSS (dB)
0
-5
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
IF Conversion Gain
IF Return Loss
Input IP3 vs. LO Drive, IF = 120 MHz USB
25
THIRD ORDER INTERCEPT (dBm)
3
MIXERS - I/Q MIXERS / IRM - CHIP
20
15
-14 dBm
-16 dBm
-18 dBm
10
6
6.5
7
FREQUENCY (GHz)
7.5
8
Absolute Maximum Ratings
RF / IF Input
LO Drive
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 9.36 mW/°C above 85 °C)
Thermal Resistance (R
TH
)
(junction to die bottom)
Storage Temperature
Operating Temperature
+13 dBm
+27 dBm
150 °C
0.61 W
106.8 °C/W
-65 to +150 °C
-55 to +85 °C
3-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Outline Drawing
3
MIXERS - I/Q MIXERS / IRM - CHIP
3-5
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BOND PADS ARE .004” SQUARE.
3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006”.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Die Packaging Information
[1]
Standard
WP-3 (Waffle Pack)
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
3
MIXERS - I/Q MIXERS / IRM - CHIP
1
RF
This pin is AC coupled
and matched to 50 Ohm.
2
LO
This pin is AC coupled
and matched to 50 Ohm.
3, 4
IF1, IF2
This pin is DC coupled. For operation to
DC pin must not sink/source more than
2 mA of current or failure may result.
Backside
GND
The backside of the die must connect to RF ground.
3-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
