HMC233G8
v00.0504
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6 GHz
Features
Isolation: 44 dB @ 2.0 GHz
31 dB @ 6.0 GHz
Insertion Loss: 1.5 dB Typical @ 4.0 GHz
Non-Reflective Design
Hermetic Surface Mount Package
Typical Applications
The HMC233G8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation
10
SWITCHES - SMT
Functional Diagram
General Description
The HMC233G8 is a broadband high isolation non-
reflective GaAs MESFET SPDT switch in a hermetic
surface mount package. Covering DC to 6 GHz, the
switch features >44 dB isolation up to 2 GHz and
>31 dB isolation up to 6 GHz. The switch operates
using complementary negative control voltage logic
lines of -5/0V and requires no bias supply.
Electrical Specifi cations,
T
A
= +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Insertion Loss
Frequency
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
“On State”
DC - 5.0 GHz
DC - 6.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
0.5 - 6.0 GHz
0.5 - 6.0 GHz
22
39
30
26
Min.
Typ.
1.3
1.5
1.8
44
35
31
17
14
12
8
27
46
Max.
1.6
1.8
2.2
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Isolation
Return Loss
Return Loss RF1, RF2
Input Power for 1 dB Compression
“Off State”
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 6.0 GHz
3
6
ns
ns
10 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC233G8
v00.0504
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6 GHz
Insertion Loss
0
Isolation
0
-10
INSERTION LOSS (dB)
-1
ISOLATION (dB)
-20
-30
-40
-50
-4
+25C
+85C
-40C
RF1
RF2
Output to Output
-2
-3
-60
-70
-5
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
10
SWITCHES - SMT
10 - 91
Return Loss
0
RFC
RF1, RF2 ON
RF1, RF2 OFF
0.1 and 1 dB Input Compression Point
35
INPUT COMPRESSION (dBm)
-5
RETURN LOSS (dB)
30
-10
25
-15
20
1 dB Compression Point
0.1 dB Compression Point
-20
-25
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
15
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Input Third Order Intercept Point
60
55
INPUT IP3 (dBm)
50
45
40
35
30
0
1
2
3
4
5
FREQUENCY (GHz)
6
7
+ 25C
+ 85C
- 40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC233G8
v00.0504
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6 GHz
Control Voltages
State
Low
Bias Condition
0 to -0.2V @ 10 uA Max.
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
Absolute Maximum Ratings
RF Input Power (Vctl= -5V)
(0.5 - 6 GHz)
Control Voltage Range (A & B)
Hot Switch Power Level
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 4 mW/°C above 85 °C)
Thermal Resistance
(Insertion Loss Path)
Thermal Resistance
(Terminated Path)
Storage Temperature
+30 dBm (@ +85 °C)
+1.0V to -7.5 Vdc
+27 dBm
150 °C
0.25 W
148 °C/W
260 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
High
Truth Table
Control Input
A
High
Low
B
Low
High
Signal Path State
RFC to RF1
ON
OFF
RFC to RF2
OFF
ON
10
SWITCHES - SMT
Operating Temperature
ESD Sensitivity (HBM)
Caution: Do not “Hot Switch” power levels greater
than +27 dBm (Vctl = 0/-5 Vdc).
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE MATERIAL: ALUMINA LOADED BOROSILICATE GLASS.
2. LEADS, BASE, COVER MATERIAL: KOVAR™ (#7052 CORNING).
3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER
ELECTROLYTIC NICKEL 50 MICROINCHES MIN.
4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. TOLERANCES: .±005 [0.13] UNLESS OTHERWISE SPECIFIED.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
10 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC233G8
v00.0504
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6 GHz
Suggested Driver Circuit
10
SWITCHES - SMT
10 - 93
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 3
A, B
See truth table and control voltage table.
2, 5, 8
RFC, RF1, RF2
These pins are DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
Package bottom must also
be connected to PCB RF ground.
4, 6, 7
GND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC233G8
v00.0504
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6 GHz
Evaluation PCB
10
SWITCHES - SMT
List of Materials for Evaluation PCB 107183
[1]
Item
J1 - J3
J4 - J6
R1, R2
U1
PCB
[2]
Description
PCB Mount SMA RF Connector
DC Pin
100 Ohm Resistor, 0603 Pkg.
HMC233G8 SPDT Switch
107100 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application should
be generated with proper RF circuit design tech-
niques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to
the ground plane similar to that shown above. The
evaluation circuit board shown above is available
from Hittite Microwave Corporation upon request.
10 - 94
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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