HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Features
Wide Bandwidth: DC - 20 GHz
Low Phase Shift vs. Attenuation
32 dB Attenuation Range
Die Size: 0.85 x 0.85 x 0.1 mm
1
ATTENUATORS - ANALOG - CHIP
Typical Applications
This attenuator is ideal for use as a VVA
for DC - 20 GHz applications:
• Point-to-Point Radio
• VSAT Radio
Functional Diagram
General Description
The HMC346 die is an absorptive Voltage Variable
Attenuator (VVA) operating from DC - 20 GHz. It
features an on-chip reference attenuator for use
with an external op-amp to provide simple single
voltage attenuation control, 0 to -3V. The device is
ideal in designs where an analog DC control signal
must control RF signal levels over a 30 dB amplitude
range. For plastic packaged version, see the
HMC346MS8G which operates from DC - 8 GHz.
Electrical Specifi cations,
T
A
= +25° C, 50 ohm system
Parameter
Insertion Loss
DC - 12 GHz:
DC - 20 GHz:
DC - 12 GHz:
DC - 20 GHz:
DC - 12 GHz:
12 - 20 GHz:
tRISE, tFALL (10/90% RF):
tON, tOFF (50% CTL to 10/90% RF):
Min. Atten:
Atten. >2 dB:
Min. Atten:
Atten. >2 dB:
27
22
6
10
Min.
Typ.
1.7
2.2
32
25
10
15
2
8
+8
+4
+25
+10
Max.
2.3
2.8
Units
dB
dB
dB
dB
dB
dB
ns
ns
dBm
dBm
dBm
dBm
Attenuation Range
Return Loss
Switching Characteristics
Input Power for 0.25 dB Compression (0.5 - 20
GHz)
Input Third Order Intercept (0.5 - 20 GHz)
(Two-tone Input Power = -8 dBm Each Tone)
1-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Insertion Loss vs. Temperature
0
-0.5
INSERTION LOSS (dB)
ATTENUATION (dB)
-1
Relative Attenuation
0
-5
-10
-15
-20
-25
-30
-35
-40
1
ATTENUATORS - ANALOG - CHIP
1-3
-1.5
-2
+25 C
-55 C
+85 C
-2.5
-3
-3.5
-4
0
5
10
15
20
25
FREQUENCY (GHz)
0
5
10
15
20
25
FREQUENCY (GHz)
Return Loss vs. Attenuation
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
0
5
10
15
20
25
FREQUENCY (GHz)
MIN
5 dB
MAX
Relative Attenuation vs.
Control Voltage @ 10 GHz
0
-0.5
-1
V1 +25 C
V1 -55 C
V1 +85 C
V2 +25 C
V2 -55 C
V2 +85 C
CONTROL VOLTAGE (Vdc)
-1.5
-2
-2.5
-3
0
5
10
15
20
25
30
RELATIVE ATTENUATION (dB)
Relative Phase
240
200
160
120
80
40
0
0
5
10
15
20
25
FREQUENCY (GHz)
5 dB
10 dB
15 dB
20 dB
25 dB
30 dB
MAX
Relative Attenuation vs.
Control Voltage @ 20 GHz
0
-0.5
-1
V1 +25 C
V1 -55 C
V1 +85 C
V2 +25 C
V2 -55 C
V2 +85 C
CONTROL VOLTAGE (Vdc)
RELATIVE PHASE (DEG)
-1.5
-2
-2.5
-3
0
5
10
15
20
25
RELATIVE ATTENUATION (dB)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
1
ATTENUATORS - ANALOG - CHIP
Input IP3 vs. Attenuation*
30
25
20
IP3 (dBm)
15
10
5
0
0
5
10
FREQUENCY (GHz)
15
20
Input IP2 vs. Attenuation*
70
60
50
IP2 (dBm)
0 dB
3 dB
6 dB
10 dB
40
30
20
10
0
5
10
FREQUENCY (GHz)
15
20
0 dB
3 dB
6 dB
10 dB
Input 0.25 dB
Compression vs. Attenuation
15
Input 1 dB Compression vs. Attenuation
20
10
0.25 dB (dBm)
P1dB (dBm)
0 dB (REF)
6 dB
15
5
10
0
5
0 dB (REF)
6 dB
-5
0
-10
0
5
10
FREQUENCY (GHz)
15
20
-5
0
5
10
FREQUENCY (GHz)
15
20
Second Harmonic vs. Attenuation*
80
70
60
50
40
30
20
0
5
10
FREQUENCY (GHz)
15
20
Absolute Maximum Ratings
RF Input Power
Control Voltage Range
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+18 dBm
+1 to -5 Vdc
-65 to +150 °C
-55 to +85 °C
Class 1A
SECOND HARMONIC (dBc)
0 dB
3 dB
6 dB
10 dB
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
*Two-tone input power = -8 dBm each tone, 1 MHz spacing.
1-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Outline Drawing
1
ATTENUATORS - ANALOG - CHIP
Description
This pad is DC coupled and matched to 50 Ohm.
Blocking capacitors are required if RF line potential
is not equal to 0V.
Interface Schematic
Control Input (Master).
Control Input (Slave).
This pad must be DC grounded.
1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS).
2. TYPICAL BOND PAD IS .004” SQUARE.
3. TYPICAL BOND PAD SPACING IS .006” CENTER TO
CENTER EXCEPT AS NOTED.
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
Die Packaging Information
[1]
Standard
GP-2 (Gel Pack)
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Pad Descriptions
Pad Number
Function
RF1 Input,
RF2 Output
1, 2
3, 6
V2, V1
4
I
5
500
GND
Die bottom must be connected to RF ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1-5
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
1
ATTENUATORS - ANALOG - CHIP
Single-Line Control Driver
External op-amp control circuit maintains
impedance match while attenuation is varied.
Input control ranges from 0 Volts (min.
attenuation) to -3.0 Volts (max. attenuation.)
Assembly Diagram
1-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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