HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC341LC3B is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
Features
2.5 dB Noise Figure
13 dB Gain
+3V @ 35 mA Supply
50 Ohm Matched Input/Output
RoHS Compliant 3x3 mm SMT Package
Functional Diagram
General Description
The HMC341LC3B is a GaAs PHEMT MMIC Low
Noise Amplifier housed in a leadless RoHS comp-
liant SMT package. Operating from 21 to 29 GHz,
the amplifier provides 13 dB of gain and a noise
figure of 2.5 dB from a single +3V supply. The RF
I/Os are DC blocked and matched to 50 Ohms
requiring no external components. The HMC341LC3B
eliminates the need for wire bonding, allowing the
use of surface mount manufacturing techniques.
Electrical Specifi cations,
T
A
= +25° C, Vdd = +3V, Idd = 35 mA
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (Vdd = +3V)
10.5
Min.
Typ.
21 - 24
13.5
0.016
3.25
10
14
8
11
19
35
0.025
5
10
Max.
Min.
Typ.
24 - 26
13
0.016
3
11
10
8.5
11.5
19
35
0.025
3.5
9
Max.
Min.
Typ.
26 - 29
12
0.016
2.5
9
9
8.5
11.5
19
35
0.025
3
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
8 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
Broadband Gain & Return Loss
15
Gain vs. Temperature
16
8
LOW NOISE AMPLIFIERS - SMT
8 - 27
5
RESPONSE (dB)
S21
S11
S22
14
GAIN (dB)
12
-5
10
+25C
+85C
-40C
-15
8
-25
20
22
24
26
28
30
32
FREQUENCY (GHz)
6
20
22
24
26
28
30
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
-5
+25C
+85C
-40C
-10
-15
-15
-20
20
22
24
26
28
30
FREQUENCY (GHz)
-20
20
22
24
26
28
30
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
+25C
+85C
-40C
Output IP3 vs. Temperature
22
20
18
8
NOISE FIGURE (dB)
6
IP3 (dBm)
16
14
+25C
+85C
-40C
4
2
12
10
20
22
24
26
28
30
20
21
22
23
24
25
26
27
28
29
30
FREQUENCY (GHz)
FREQUENCY (GHz)
0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
LOW NOISE AMPLIFIERS - SMT
P1dB vs. Temperature
14
12
10
P1dB (dBm)
8
6
4
2
0
20
22
24
26
28
30
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
14
12
10
Psat (dBm)
8
6
4
2
0
20
22
24
26
28
30
FREQUENCY (GHz)
+25C
+85C
-40C
Power Compression @ 25 GHz
16
Pout (dBm), GAIN (dB), PAE (%)
12
Reverse Isolation vs. Temperature
0
-10
8
4
0
-4
-8
-20 -18 -16 -14 -12 -10 -8
-40
-6
-4
-2
0
2
4
6
20
22
24
ISOLATION (dB)
Pout
Gain
PAE
+25C
+85C
-40C
-20
-30
26
28
30
INPUT POWER (dBm)
FREQUENCY (GHz)
Gain, Power & Noise Figure
vs. Supply Voltage @ 25 GHz
16
GAIN (dB), P1dB (dBm), Psat (dBm),
NOISE FIGURE (dB)
14
12
10
8
6
4
2
0
2.75
Gain
P1dB
Psat
Noise Figure
3.25
3.75
4.25
4.75
5.25
Vdd Supply Voltage (Vdc)
8 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.7
+3.0
+4.0
+5.0
Idd (mA)
34
35
38
41
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 5.43 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+5 dBm
175 °C
0.489 W
184 °C/W
-65 to +150 °C
-40 to +85 °C
8
LOW NOISE AMPLIFIERS - SMT
8 - 29
Note: Amplifier will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC341LC3B
v02.1208
SMT GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 21 - 29 GHz
8
LOW NOISE AMPLIFIERS - SMT
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vdd
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1000pF, and 2.2 μF are required.
2, 3, 7-9
N/C
No connection required. These pins may be connected
to RF/DC ground without affecting performance.
Package bottom has an exposed metal paddle that
must also be connected to RF/DC ground.
This pin is AC coupled and matched
to 50 Ohms from 21 - 29 GHz.
This pin is AC coupled and matched
to 50 Ohms from 21 - 29 GHz.
4, 6, 10, 12
GND
5
RFIN
11
RFOUT
Application Circuit
Component
C1
C2
C3
Value
100 pF
1,000 pF
2.2 μF
8 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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