HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Features
P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Included in the HMC-DK001 Designer’s Kit
Typical Applications
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Ideal as a Driver & Amplifier for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5 - 6 GHz UNII & HiperLAN
Functional Diagram
General Description
The HMC313 & HMC313E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single Vcc supply.
The surface mount SOT26 amplifier can be used
as a broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313(E) offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current.
Electrical Specifi cations,
T
A
= +25 °C, Vcc = +5.0V
Vcc = +5V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
Note: Data taken with broadband bias tee on device output.
24
11
14
Typ.
DC - 6
17
0.02
7
6
30
14
15
27
6.5
50
20
0.03
Max.
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
Units
9 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Gain vs. Temperature
25
Gain & Return Loss
25
9
+ 25 C
+ 85 C
- 40 C
16
RESPONSE (dB)
20
7
GAIN (dB)
S11
S21
S22
15
-2
10
-11
5
-20
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
Input & Output Return Loss
0
Reverse Isolation
0
-10
RETURN LOSS (dB)
-5
ISOLATION (dB)
-20
-10
-30
-15
S11
S22
-40
-20
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
-50
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
P1dB vs. Temperature
25
+ 25 C
+ 85 C
- 40 C
Psat vs. Temperature
25
+ 25 C
+ 85 C
- 40 C
20
P1dB (dBm)
20
PSAT (dBm)
15
15
10
10
5
5
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 27
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Output IP3 vs. Temperature
Power Compression @ 1 GHz
20
Pout (dBm), Gain (dB), PAE (%)
15
10
5
0
-5
Pout (dBm)
Gain (dB)
PAE (%)
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
IP3 (dBm)
40
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
+ 25 C
+ 85 C
- 40 C
-10
-22 -20 -18 -16 -14 -12 -10 -8 -6 -4
INPUT POWER (dBm)
-2
0
2
4
Power Compression @ 3 GHz
20
Pout (dBm), Gain (dB), PAE (%)
15
10
5
0
-5
-10
-22
Pout (dBm)
Gain (dB)
PAE (%)
-18
-14
-10
-6
INPUT POWER (dBm)
-2
2
9 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +5Vdc)
Junction Temperature
Continuous Pdiss (T = 85
°C)
(derate 3.99 mW/°C above 85
°C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+20 dBm
150 °C
0.259 W
251 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9 - 29
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND
Package Information
Part Number
HMC313
HMC313E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H313
XXXX
313E
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC313
/
313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Pin Descriptions
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Number
Function
Description
Interface Schematic
1
RFOUT
This pin is DC coupled. An off chip DC blocking capacitor
is required.
3
RFIN
This pin is DC coupled. An off chip DC blocking capacitor
is required.
2, 4-6
GND
These pins must be connected to RF/DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc = 50 mA, Rbias = (Vs - 5.0) / Icc
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
5V
0Ω
6V
20 Ω
¼W
8V
62 Ω
½W
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
9 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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