HMC376LP3
/
376LP3E
v01.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC376LP3 / HMC376LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• Private Land Mobile Radio
• GSM/GPRS & EDGE
• UHF Reallocation Applications
Features
Noise Figure: 0.7 dB
Output IP3: +36 dBm
Gain: 15 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC376LP3 & HMC376LP3E are GaAs PHEMT
MMIC Low Noise Amplifiers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The amplifier
has been optimized to provide 0.7 dB noise figure,
15 dB gain and +36 dBm output IP3 from a single
supply of +5V. The HMC376LP3(E) feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise figure, please see the HMC617LP3(E).
Electrical Specifi cations,
T
A
= +25° C, Vdd = +5V, Rbias = 10 Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
*Rbias resistor value sets current, see application circuit herein.
12.5
Min.
Typ.
810 - 960
14.5
0.005
0.7
13
12
20
21.5
22
36
73
0.01
1.0
11.5
Max.
Min.
Typ.
700 - 1000
14.5
0.005
0.7
14
12
22
21
22
36
73
0.01
1.0
Max.
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
7-1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC376LP3
/
376LP3E
v01.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Broadband Gain & Return Loss
25
Gain vs. Temperature
20
+25C
+85C
- 40C
7
AMPLIFIERS - LOW NOISE - SMT
7-2
15
RESPONSE (dB)
18
5
S21
S11
S22
GAIN (dB)
1.75
2
16
-5
14
-15
12
-25
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
10
0.6
0.7
0.8
0.9
FREQUENCY (GHz)
1
1.1
Input Return Loss vs. Temperature
0
+25 C
+85 C
-40 C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
-10
-10
-15
-15
+25 C
+85 C
-40 C
-20
-20
-25
0.6
0.7
0.8
0.9
FREQUENCY (GHz)
1
1.1
-25
0.6
0.7
0.8
0.9
FREQUENCY (GHz)
1
1.1
Reverse Isolation vs. Temperature
0
Noise Figure vs. Temperature
1.6
-5
+25 C
+85 C
-40 C
-10
NOISE FIGURE (dB)
1.2
ISOLATION (dB)
+25 C
+85 C
-40 C
0.8
-15
-20
0.4
-25
0.6
0.7
0.8
0.9
FREQUENCY (GHz)
1
1.1
0
0.6
0.7
0.8
0.9
FREQUENCY (GHz)
1
1.1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC376LP3
/
376LP3E
v01.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
7
AMPLIFIERS - LOW NOISE - SMT
P1dB vs. Temperature @ Idd = 73 mA
25
Psat vs. Temperature @ Idd = 73 mA
25
23
P1dB (dBm)
Psat (dBm)
23
21
+25 C
+85 C
-40 C
21
+25 C
+85 C
-40 C
19
19
17
17
15
0.7
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
0.95
1
15
0.7
0.75
0.8
0.85
0.9
FREQUENCY (GHz)
0.95
1
Output IP3 vs. Temperature @ Idd = 73 mA
40
Gain, Noise Figure &
Power vs. Supply Current @ 900 MHz
24
22
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
20
18
16
14
12
60
0.4
70
80
90
100
110
120
GAIN
P1dB
Noise figure
1
38
0.8
IP3 (dBm)
36
34
+25 C
+85 C
-40 C
0.6
32
30
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
SUPPLY CURRENT (mA)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vs = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 11.83 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+8.0 Vdc
+15 dBm
150 °C
0.769 W
84.5 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
with Rbias = 10 Ohms
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
73.0
73.4
73.6
Recommended Bias Resistor Values
for Various Idd
Idd (mA)
60
70
Rbias (Ohms)
12
10
9.1
6.8
5.1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
80
100
120
7-3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC376LP3
/
376LP3E
v01.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Outline Drawing
7
AMPLIFIERS - LOW NOISE - SMT
Package Marking
[3]
H376
XXXX
H376
XXXX
[1]
[2]
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
HMC376LP3
HMC376LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7-4
HMC376LP3
/
376LP3E
v01.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
7
AMPLIFIERS - LOW NOISE - SMT
Pin Descriptions
Pin Number
1, 4, 5, 7, 9,
12 - 14, 16
Function
N/C
Description
No connection necessary. These pins may be connected
to RF/DC ground. Performance will not be affected.
Interface Schematic
2
RFIN
This pin is matched to 50 Ohms with a 47 nH
inductor to ground. See application circuit.
3, 6, 10
GND
These pins and package bottom must be
connected to RF/DC ground.
8
Res
This pin is used to set the DC current of the amplifier
by selection of external bias resistor.
See application circuit.
11
RFOUT
This pin is AC coupled and matched
to 50 Ohms from 0.7 - 1.0 GHz.
15
Vdd
Power supply voltage. Choke inductor and bypass
capacitors are required. See application circuit.
Application Circuit
Note 1: L1, L2 and C1 should be located as close to the pins as possible.
7-5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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