AP75N07GW
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
75V
11mΩ
90A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage applications
such as SMPS.
D
S
TO-3P
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
3
Storage Temperature Range
Operating Junction Temperature Range
4
Rating
75
+20
90
70
360
250
2
450
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.5
40
Units
℃/W
℃/W
1
200902232
Data & specifications subject to change without notice
AP75N07GW
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
2
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
75
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.08
-
-
120
-
-
-
83
10
51
15
73
340
200
4270
690
320
1.8
Max.
-
-
11
3
-
10
250
+100
130
-
-
-
-
-
-
6830
-
-
2.7
Units
V
V/℃
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
=10V, I
D
=40A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=40A
V
DS
=75V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=40A
V
DS
=60V
V
GS
=4.5V
V
DD
=40V
I
D
=30A
R
G
=10Ω,V
GS
=10V
R
D
=1.33Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=60V
,
V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting T
j
=25
o
C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=30A.
4.Package limitation current is 90A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
T
j
=25℃, I
S
=40A, V
GS
=0V
I
S
=40A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
90
235
Max.
1.5
-
-
Units
V
ns
nC
2
AP75N07GW
280
240
T
C
= 25 C
240
o
I
D
, Drain Current (A)
200
I
D
, Drain Current (A)
10V
7.0 V
5.0V
4.5V
T
C
= 150 C
200
o
10V
7.0 V
5.0V
4.5V
160
160
120
120
80
V
G
=3.0V
80
V
G
=3.0V
40
40
0
0
3
6
9
12
0
0
3
6
9
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
2.0
I
D
=20A
T
C
=25
o
C
Normalized R
DS(ON)
1.6
I
D
=40A
V
G
=10V
R
DS(ON)
(m
Ω
)
16
1.2
12
0.8
8
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
13
20
15
12
R
DS(ON)
(mΩ)
I
S
(A)
V
GS
=4.5V
11
T
j
=150 C
10
o
T
j
=25 C
o
V
GS
=10V
5
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
9
0
20
40
60
80
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
AP75N07GW
14
f=1.0MHz
10000
I
D
=40A
12
V
GS
, Gate to Source Voltage (V)
C
iss
10
8
C (pF)
V
DS
= 4 0 V
V
DS
= 48 V
V
DS
= 60 V
1000
6
C
oss
C
rss
4
2
0
0
40
80
120
160
200
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
DUTY=0.5
100
I
D
(A)
100us
0.2
1ms
10
0.1
0.1
0.05
10ms
T
C
=25
o
C
Single Pulse
100ms
DC
P
DM
t
0.02
T
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
SINGLE PULSE
1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
V
DS
=5V
T
j
=25 C
o
T
j
=150
o
C
V
G
Q
G
4.5V
I
D
, Drain Current (A)
120
80
Q
GS
Q
GD
40
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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