HMC441LC3B
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Typical Applications
The HMC441LC3B is ideal for use as a medium power
amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
Features
Gain: 14 dB
Saturated Output Power: +21.5 dBm @ 27% PAE
Single Positive Supply: +5V @ 90 mA
50 Ohm Matched Input/Output
12 Lead Ceramic 3x3mm SMT Package: 9mm
2
11
• LO Driver for HMC Mixers
• Military EW & ECM
Functional Diagram
General Description
The HMC441LC3B is an efficient GaAs PHEMT
MMIC Medium Power Amplifier housed in a leadless
RoHS compliant SMT package. Operating between
6 and 18 GHz, the amplifier provides 14 dB of gain,
+21.5 dBm of saturated power and 27% PAE from
a +5V supply. This 50 Ohm matched amplifier does
not require any external components and operates
from a single positive supply, making it an ideal
linear gain block or driver for HMC SMT mixers. The
HMC441LC3B is compatible with high volume surface
mount manufacturing techniques, and the I/Os are
DC blocked for further ease of integration.
Electrical Specifi cations,
T
A
= +25° C, Vdd = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
16
10
Min.
Typ.
6.0 - 8.5
14
0.015
10
12
19
20
30
4.5
90
115
17
0.02
13
Max.
Min.
Typ.
8.5 - 12.5
17
0.015
13
15
20
21.5
32
4.5
90
115
17
0.02
14
Max.
Min.
Typ.
12.5 - 14.0
17
0.015
20
17
20
22.5
32
4.5
90
115
17
0.02
10
Max.
Min.
Typ.
14.0 - 18.0
14
0.015
13
14
20
21.5
32
4.5
90
115
0.02
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
11 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LC3B
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
Gain vs. Temperature
20
18
16
14
GAIN (dB)
S21
S11
S22
12
10
8
6
4
2
0
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25C
+85C
-40C
11
LINEAR & POWER AMPLIFIERS - SMT
11 - 79
Input Return Loss vs. Temperature
0
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-2
-5
RETURN LOSS (dB)
-4
RETURN LOSS (dB)
-6
-8
-10
-12
-14
-16
-18
+25C
+85C
-40C
-10
-15
-20
-25
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
-20
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
P1dB vs. Temperature
25
24
23
22
P1dB (dBm)
21
20
19
18
17
16
15
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
25
24
23
22
Psat (dBm)
21
20
19
18
17
16
15
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25C
+85C
-40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v04.1208
HMC441LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Power Compression @ 11 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-10
Pout
Gain
PAE
Power Compression @ 15 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-10
Pout
Gain
PAE
11
-8
-6
-4
-2
0
2
4
6
8
10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
36
34
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
+25C
+85C
-40C
32
IP3 (dBm)
30
28
26
24
22
20
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
+25C
+85C
-40C
7
6
5
4
3
2
1
0
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
Gain, Power & Output IP3
vs. Supply Voltage @ 11 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
34
32
30
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
28
26
24
22
20
18
16
14
4.5
Gain
P1dB
Psat
IP3
-20
-30
-40
-50
-60
+25C
+85C
-40C
5
Vdd (V)
5.5
6
7
8
9
10
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
11 - 80
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LC3B
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.2 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+6 Vdc
+15 dBm
175 °C
0.74 W
122 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+5.5
+5.0
+4.5
Idd (mA)
92
90
88
Note: Amplifier will operate over full voltage range shown above
11
LINEAR & POWER AMPLIFIERS - SMT
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 81
HMC441LC3B
v04.1208
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
Pin Descriptions
Pin Number
1, 3, 7, 9
Function
GND
Description
Package bottom must also be
connected to RF/DC ground
This pin is AC coupled
and matched to 50 Ohms.
This pin may be connected to RF/DC ground.
Performance will not be affected.
This pin is AC coupled
and matched to 50 Ohms.
Interface Schematic
2
RFIN
11
4-6
10, 12
N/C
8
RFOUT
11
Vdd
Power Supply Voltage for the amplifier.
External bypass capacitors are required.
Application Circuit
Component
C1
C2
C3
Value
100 pF
1,000 pF
2.2 μF
11 - 82
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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