HMC405
v03.0109
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
Typical Applications
Features
Gain: 16 dB
P1dB Output Power: +13 dBm
Stable Gain Over Temperature
50 Ohm I/O’s
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
An excellent cascadable 50 Ohm
Gain Block or LO Driver for:
• Microwave & VSAT Radios
• Test Equipment
• Military EW, ECM, C I
• Space Telecom
3
Small Size: 0.38 x 0.58 x 0.1 mm
Functional Diagram
General Description
The HMC405 die is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC DC to
10 GHz amplifier. This amplifier can be used as either
a cascadable 50 Ohm gain stage or to drive the
LO of HMC mixers with up to +17 dBm output power.
The HMC405 offers 16 dB of gain and an output
IP3 of +32 dBm while requiring only 50 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components. The HMC405 can easily be integrated
into Multi-Chip-Modules (MCMs) due to its small
(0.22mm
2
) size. All data is with the chip in a 50 Ohm
test fixture connected via 0.025mm (1 mil) diameter
wire bonds of minimal length 0.5mm (20 mils).
Electrical Specifi cations,
Vs= +5 V, Rbias= 22 Ohm, T
A
= +25° C
Parameter
Gain
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 10.0 GHz
DC - 7.0 GHz
7.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
DC - 3.0 GHz
3.0 - 7.0 GHz
7.0 - 10.0 GHz
DC - 7.0 GHz
7.0 - 10.0 GHz
Min.
Typ.
16
15
13
0.004
0.015
0.02
10
11
9
10
20
17
15
13
10
30
25
22
4
4.5
50
Max.
Units
dB
dB
dB
dB/ °C
dB/ °C
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
2 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC405
v03.0109
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
Gain & Return Loss
20
15
RESPONSE (dB)
10
Gain vs. Temperature
20
2
+25 C
+85 C
-55 C
17
GAIN (dB)
5
0
-5
-10
-15
-20
0
1
2
3
4
5
S21
S11
S22
14
11
8
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
-3
RETURN LOSS (dB)
+25 C
+85 C
-55 C
-3
RETURN LOSS (dB)
+25 C
+85 C
-55 C
-6
-6
-9
-9
-12
-12
-15
0
2
4
6
8
10
FREQUENCY (GHz)
-15
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
10
+25 C
+85 C
-55 C
-5
+25 C
+85 C
-55 C
8
NOISE FIGURE (dB)
-10
6
-15
4
-20
2
-25
0
2
4
6
8
10
FREQUENCY (GHz)
0
1
2.5
4
5.5
7
8.5
10
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 21
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
HMC405
v03.0109
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
P1dB vs. Temperature
Psat vs. Temperature
20
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
P1dB (dBm)
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
+25 C
+85 C
-55 C
16
Psat (dBm)
12
+25 C
+85 C
-55 C
8
4
0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
Power Compression @ 1 GHz
22
Pout (dBm), GAIN (dB), PAE (%)
18
14
10
6
2
-2
-6
-10
-20
Pout
Gain
PAE
Power Compression @ 7 GHz
22
Pout (dBm), GAIN (dB), PAE (%)
18
14
10
6
2
-2
-6
-10
-20 -18 -16 -14 -12 -10 -8
Pout
Gain
PAE
-16
-12
-8
-4
0
4
8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34
30
26
IP3 (dBm)
22
18
14
10
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Gain, Power, Output IP3 & Supply
Current vs. Supply Voltage @ 1 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
40
35
30
25
Icq (mA)
20
15
10
5
0
4.5
4.75
5
Vs(Vdc)
5.25
Icq
Gain
P1dB
Psat
IP3
80
60
40
20
0
5.5
2 - 22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC405
v03.0109
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
Absolute Maximum Ratings
Collector Bias Voltage
RF Input Power (RFiIN)(Vcc = +5 Vdc)
Junction Temperature
Continuous Pdiss (T= 85 °C)
(derate 5.21 mW/°C above 85 °C)
Thermal Resistance
(junction to die bottom)
Storage Temperature
Operating Temperature
+7 Vdc
+10 dBm
150 °C
0.339 W
192 °C/W
-65 to +150 °C
-55 to +85 °C
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2 - 23
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
Die Packaging Information
[1]
Standard
GP-3 (Gel Pack)
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC405
v03.0109
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
Pad Descriptions
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
2
RFOUT
RF output and DC Bias for the output stage.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
Recommended Component Values
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
1000
56 nH
100 pF
3000
8.2 nH
100 pF
7000
2.2 nH
100 pF
2 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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