HMC479ST89
/
479ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +33 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +12V
Industry Standard SOT89 Package
Included in the HMC-DK001 Designer’s Kit
Typical Applications
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
The HMC479ST89 / HMC479ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC479ST89 & HMC479ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 5 GHz. Packaged
in an industry standard SOT89, the amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage as
well as a LO or PA driver with up to +20 dBm output
power. The HMC479ST89 offers 15 dB of gain with a
+33 dBm output IP3 at 850 MHz while requiring only
75 mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity to
normal process variations and excellent gain stability
over temperature while requiring a minimal number of
external bias components.
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 51 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 5.0 GHz
DC - 5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 3.0 GHz
3.0 - 5.0 GHz
Min.
12.5
11.5
10.5
9.5
8.5
Typ.
15
13.5
12.5
11.5
10.5
0.008
12
16
18
22
20
22
18
18
16
14
13
11
33
30
25
23
4.0
4.5
75
Max.
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
0.012
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15
13
11
10
8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8 - 116
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC479ST89
/
479ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0
1
2
3
4
5
Gain vs. Temperature
20
18
16
8
+25C
+85C
-40C
RESPONSE (dB)
S21
S11
S22
12
10
8
6
4
2
0
6
7
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
-10
-15
-20
-25
-30
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
OUTPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
-35
-40
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
+25C
+85C
-40C
Noise Figure vs. Temperature
10
9
-5
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
+25C
+85C
-40C
-10
-15
-20
-25
1
2
3
4
5
6
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 117
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
14
GAIN (dB)
INPUT RETURN LOSS (dB)
HMC479ST89
/
479ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
P1dB vs. Temperature
Psat vs. Temperature
22
20
18
16
Psat (dBm)
14
12
10
8
6
4
2
0
+25C
+85C
-40C
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
P1dB (dBm)
22
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
0
1
2
3
4
5
6
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 72 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
36
30
24
18
12
6
0
5
6
7
8
9
10
11
12
Vs (Vdc)
Gain
P1dB
Psat
IP3
35
OIP3 (dBm)
30
25
+25C
+85C
-40C
20
15
0
1
2
3
4
5
6
FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 51 Ohms
82
80
78
Icc (mA)
76
74
72
70
68
66
3.8
-40C
+25C
+85C
3.9
4
4.1
4.2
Vcc (Vdc)
4.3
4.4
4.5
4.6
8 - 118
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC479ST89
/
479ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 14.76 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+6.0 Vdc
+17 dBm
150 °C
0.960 W
67.6 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8 - 119
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC479ST89
HMC479ST89E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H479
XXXX
H479
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC479ST89
/
479ST89E
v02.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Pin Descriptions
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to RF/
DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
5V
13 Ω
1/8 W
6V
27 Ω
1/4 W
8V
51 Ω
1/2 W
10V
82 Ω
1/2 W
12V
110 Ω
1W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
8 - 120
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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