HMC469MS8G
/
469MS8GE
v01.0605
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
Features
P1dB Output Power: +18 dBm
Gain: 15 dB
Output IP3: +34 dBm
Supply (Vs): +5V to +12V
14.9 mm
2
Ultra Small 8 Lead MSOP
Typical Applications
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
The HMC469MS8G /HMC469MS8GE is a dual
RF/IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
General Description
Functional Diagram
The HMC469MS8G & HMC469MS8GE are SiGe HBT
Dual Channel Gain Block MMIC SMT amplifiers
covering DC to 5 GHz. These versatile products
contain two gain blocks, packaged in a single 8 lead
plastic MSOP, for use as either separate cascadable
50 Ohm RF/IF gain stages, LO or PA drivers or with
both amplifiers combined utilizing external 90°
hybrids to create a high linearity driver amplifier. Each
amplifier in the HMC469MS8G(E) offers 15 dB of
gain, +18 dBm P1dB with a +34 dBm output IP3 at
850 MHz while requiring only 75 mA from a single
positive supply. The combined dual amplifier circuit
delivers up to +20 dBm P1dB with +35 dBm OIP3
for specific application bands through 4 GHz.
Electrical Specifi cations,
Vs= 8.0 V, Rbias= 51 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.5 GHz
2.5 - 4.0 GHz
4.0 - 5.0 GHz
DC - 3.0 GHz
3.0 - 5.0 GHz
Min.
12.5
11
10
9
7.5
Typ.
15
13
12
11
9.5
0.008
12
10
8
14
10
8
6
18
18
16
14
12.5
11
34
30
25
23
4.0
5.0
75
Max.
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
0.012
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15
13
11
9.5
8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output. All specifi cations refer to a single amplifi er.
9 - 44
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC469MS8G
/
469MS8GE
v01.0605
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
Gain vs. Temperature
20
9
+25C
+85C
-40C
16
0
-5
-10
-15
-20
-25
0
1
2
3
12
8
4
0
4
5
6
7
8
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
-5
-10
-15
+25C
+85C
-40C
-15
+25C
+85C
-40C
-20
0
1
2
3
4
5
6
FREQUENCY (GHz)
-20
0
1
2
3
4
5
6
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
10
+25C
+85C
-40C
-5
+25C
+85C
-40C
8
NOISE FIGURE (dB)
-10
6
-15
4
-20
2
-25
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
Data shown is of a single amplifi er.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 45
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
GAIN (dB)
5
S21
S11
S22
HMC469MS8G
/
469MS8GE
v01.0605
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
P1dB vs. Temperature
22
20
18
16
P1dB (dBm)
Psat vs. Temperature
22
20
18
16
Psat (dBm)
14
12
10
8
6
4
2
0
+25C
+85C
-40C
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
+25C
+85C
-40C
0
1
2
3
4
5
6
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 75 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
36
30
24
18
12
6
0
5
6
7
8
9
10
11
12
Vs (Vdc)
Gain
P1dB
Psat
IP3
35
IP3 (dBm)
30
25
+25C
+85C
-40C
20
15
0
1
2
3
4
5
6
FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, R
BIAS
= 51 Ohms
82
80
78
Icc (mA)
76
74
72
70
68
66
3.8
-40C
+25C
+85C
Cross Channel Isolation
0
-5
PATH ISOLATION (dB)
-10
-15
-20
-25
-30
-35
-40
-45
INPUT1-OUTPUT2
INPUT2-OUTPUT1
3.9
4
4.1
4.2
Vcc (Vdc)
4.3
4.4
4.5
4.6
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
Data shown is of a single amplifi er.
9 - 46
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC469MS8G
/
469MS8GE
v01.0605
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
Gain*
20
15
10
5
0
-5
-10
0.5
+25C
+85C
-40C
Input & Output Return Loss *
0
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9 - 47
RETURN LOSS (dB)
-10
INPUT RETURN LOSS
OUTPUT RETURN LOSS
GAIN (dB)
-20
-30
-40
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation*
0
REVERSE ISOLATION (dB)
Output IP3*
40
-10
IP3 (dBm)
35
-20
30
-30
25
+25C
+85C
-40C
-40
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
20
1.4
1.6
1.8
2
2.2
2.4
2.6
FREQUENCY (GHz)
Output P1dB*
22
20
18
16
14
12
10
1.4
+25C
+85C
-40C
Output Psat*
22
20
18
16
14
12
10
1.4
+25C
+85C
-40C
P1dB (dBm)
1.6
1.8
2
2.2
2.4
2.6
Psat (dBm)
1.6
1.8
2
2.2
2.4
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
* Measurements shown are of both channels with 1.5 - 2.5 GHz 90° splitter/combiners on input & output
(see application circuit for balanced operation).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC469MS8G
/
469MS8GE
v01.0605
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
Absolute Maximum Ratings
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 29.58 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+6.0 Vdc
100 mA
+17 dBm
150 °C
1.92 W
33.8 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC469MS8G
HMC469MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H469
XXXX
H469
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
9 - 48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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