HMC465
v06.1209
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Features
gain: 17 db
output voltage to 10 vp-p
saturated output power: +24 dbm
supply voltage: +8v @160mA
50 ohm matched input/output
die size: 3.12 x 1.63 x 0.1 mm
2
Amplifiers - driver & gAin block - chip
Typical Applications
The hmc465 wideband driver is ideal for:
• oc192 ln/mZ modulator driver
• Telecom infrastructure
• Test instrumentation
• military & space
Functional Diagram
General Description
The hmc465 is a gaAs mmic phemT distributed
driver Amplifier die which operates between dc and
20 ghz. The amplifier provides 17 db of gain, 2.5 db
noise figure and +24 dbm of saturated output power
while requiring only 160 mA from a +8v supply. gain
flatness is excellent at ±0.25 db as well as ±1 deg
deviation from linear phase from dc - 10 ghz making
the hmc465 ideal for oc192 fiber optic ln/mZ modu-
lator driver amplifier as well as test equipment appli-
cations. The hmc465 amplifier i/os are internally
matched to 50 ohms for easy integration into multi-
chip-modules (mcms). All data is measured with
the chip in a 50 ohm test fixture connected via
0.025 mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Electrical Specifications,
T
A
= +25 °C, Vdd = 8V, Vgg2 = 1.5V, Idd = 160mA*
parameter
frequency range
gain
gain flatness
gain variation over Temperature
noise figure
input return loss
output return loss
output power for 1 db compression (p1db)
saturated output power (psat)
output Third order intercept (ip3)
saturated output voltage
group delay variation
supply current
(idd) (vdd = 8v, vgg1 = -0.6v Typ.)
19.5
15
min.
Typ.
dc - 6
18
±0.5
0.015
3
18
18
22.5
24
33
10
±3
160
19
0.025
5
15
max.
min.
Typ.
6 - 12
17
±0.25
0.015
2.5
20
17
22
24
30
10
±3
160
17
0.025
3.5
13
max.
min.
Typ.
12 - 20
16.5
±0.5
0.02
3
16
17
20
22
26
8
±3
160
0.03
4.5
max.
Units
ghz
db
db
db/ °c
db
db
db
dbm
dbm
dbm
vp-p
ps
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd = 160mA typical.
2-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC465
v06.1209
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Gain vs. Temperature
20
Gain & Return Loss
20
10
16
S21
S11
S22
2
+25C
+85C
-55C
RESPONSE (dB)
0
12
-10
8
-20
4
-30
0
4
8
12
16
20
24
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
+25C
+85C
-55C
RETURN LOSS (dB)
-10
+25C
+85C
-55C
-15
-15
-20
-20
-25
-25
-30
0
2
4
6
8
10
12
14
16
18
20
22
-30
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
30
20
Noise Figure vs. Temperature
8
7
NOISE FIGURE (dB)
RESPONSE (dB)
10
0
-10
-20
-30
-40
0.00001
0.0001
0.001
0.01
6
5
4
3
2
1
0
S21
S11
S22
+25C
+85C
-55C
0.1
1
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2-2
Amplifiers - driver & gAin block - chip
GAIN (dB)
HMC465
v06.1209
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Psat vs. Temperature
30
2
Amplifiers - driver & gAin block - chip
Output P1dB vs. Temperature
30
26
26
P1dB (dBm)
22
Psat (dBm)
22
18
+25C
+85C
-55C
18
+25C
+85C
-55C
14
14
10
0
2
4
6
8
10
12
14
16
18
20
22
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
+25C
+85C
-55C
Gain, Power & Output IP3 vs.
Supply Voltage @ 10 GHz, Idd= 160mA
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
40
35
30
25
20
15
10
5
0
5.5
6
6.5
7
7.5
8
8.5
Gain
P1dB
Psat
IP3
36
IP3 (dBm)
32
28
24
20
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Vdd SUPPLY VOLTAGE (V)
Group Delay
0
Deviation from Linear Phase
DEVIATION FROM LINEAR PHASE (deg)
5
-20
GROUP DELAY (ps)
3
-40
1
-60
-1
-80
-3
-100
0
1
2
3
4
5
6
7
8
9
10
-5
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
2-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC465
v06.1209
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Typical Supply Current vs. Vdd
vdd (v)
+7.5
+8.0
+8.5
idd (mA)
161
160
Absolute Maximum Ratings
drain bias voltage (vdd)
gate bias voltage (vgg1)
gate bias current (igg1)
gate bias voltage (vgg2)
gate bias current (igg2)
rf input power (rfin)(vdd = +8v)
channel Temperature
continuous pdiss (T = 85 °c)
(derate 24 mW/°c above 85 °c)
Thermal resistance
(channel to die bottom)
storage Temperature
operating Temperature
+9v
-2 to 0v
+3.2mA
(vdd -8) v to +3 vdc
+3.2mA
+23 dbm
175 °c
2.17 W
41.5 °c/W
-65 to +150 °c
-55 to +85 °c
2
Amplifiers - driver & gAin block - chip
2-4
159
elecTrosTATic sensiTive device
observe hAndling precAUTions
Outline Drawing
Die Packaging Information
[1]
standard
gp-1 (gel pack)
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
noTes:
1. All dimensions in inches [millimeTers]
2. no connecTion reQUired for UnlAbeled bond pAds
3. die Thickness is 0.004 (0.100)
4. TYpicAl bond pAd is 0.004 (0.100) sQUAre
5. bAckside meTAlliZATion: gold
6. bAckside meTAl is groUnd
7. bond pAd meTAliZATion: gold
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC465
v06.1209
GaAs pHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
2
Amplifiers - driver & gAin block - chip
Pad Descriptions
pad number
function
description
interface schematic
1
rfin
This pad is dc coupled and matched to 50 ohms.
2
vgg2
gate control 2 for amplifier. +1.5v should be applied to
vgg2 for nominal operation.
3
Acg1
low frequency termination. Attach bypass capacitor
per application circuit herein.
4
Acg2
5
rfoUT & vdd
rf output for amplifier. connect the dc
bias (vdd) network to provide drain current (idd).
see application circuit herein.
6
Acg3
low frequency termination. Attach bypass capacitor
per application circuit herein.
7
Acg4
8
vgg1
gate control 1 for amplifier.
die
bottom
gnd
die bottom must be connected to rf/dc ground.
2-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
