HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Features
Gain: 18 dB
saturated power: +21 dBm @ 18% pAe
output ip3: +28 dBm
single supply: +5V @ 120 mA
50 ohm matched input/output
16 lead 3x3mm smT package: 9mm²
Typical Applications
The HmC451lp3(e) is ideal for:
• microwave radio & VsAT
• military & space
• Test equipment & sensors
9
Amplifiers - lineAr & power - smT
• fiber optics
• lo Driver for HmC mixers
Functional Diagram
General Description
The HmC451lp3(e) is an efficient GaAs pHemT
mmiC medium power Amplifier housed in a leadless
roHs compliant smT package. operating between
5 and 18 GHz, the amplifier provides 18 dB of gain,
+21 dBm of saturated power and 18% pAe from a
single +5V supply. This 50 ohm matched amplifier
does not require any external components and the
rf i/o’s are DC blocked, making it an ideal linear
gain block or lo driver for HmC mixers. The
HmC451lp3(e) eliminates the need for wire bonding,
and allows the use of surface mount manufacturing
techniques.
Electrical Specifications,
T
A
= +25° C, Vdd
1
= Vdd
2
= +5V
parameter
frequency range
Gain
Gain Variation over Temperature
input return loss
output return loss
output power for 1 dB
Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
noise figure
supply Current (idd)
16.5
15
min.
Typ.
5 - 16
18
0.02
13
12
19.5
21
28
7
120
150
16
0.03
12.5
max.
min.
Typ.
16 - 18
16
0.02
13
8
19
20
25
7
120
150
0.03
max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Gain vs. Temperature
24
20
16
GAIN (dB)
12
8
+25C
+85C
-40C
Broadband Gain & Return Loss
25
15
RESPONSE (dB)
S21
S11
S22
5
-5
-15
9
16
18
20
4
0
4
6
8
10
12
14
16
18
20
4
6
8
10
12
14
FREQUENCY (GHz)
FREQUENCY (GHz)
-25
Input Return Loss vs. Temperature
0
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
-10
-10
-15
-15
+25C
+85C
-40C
-20
-20
-25
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
-25
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
P1dB vs. Temperature
28
24
20
P1dB (dBm)
16
12
8
4
0
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
28
24
20
Psat (dBm)
16
12
8
4
0
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
+25C
+85C
-40C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
Amplifiers - lineAr & power - smT
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Power Compression @ 17 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
20
16
12
8
4
0
-18
Power Compression @ 10 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
20
16
12
8
4
0
-18
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
9
Amplifiers - lineAr & power - smT
-14
-10
-6
-2
2
6
-14
-10
-6
-2
2
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
32
30
28
IP3 (dBm)
26
24
22
20
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
Noise Figure vs. Temperature
12
10
NOISE FIGURE (dB)
8
6
+25C
+85C
-40C
+25C
+85C
-40C
4
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
Gain, P1dB & PSAT
vs. Supply Voltage @ 11 GHz
22
GAIN (dB), P1dB (dBm), Psat (dBm)
21
20
19
18
17
16
4.5
Gain
P1dB
Psat
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
+25C
+85C
-40C
5
Vdd (V)
5.5
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
9-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Typical Supply Current vs. Vdd
1
= Vdd
2
Vdd
1
= Vdd
2
(V)
+4.5
+5.0
+5.5
idd
1
+ idd
2
(mA)
120
122
124
Absolute Maximum Ratings
Drain Bias Voltage (Vdd
1
= Vdd
2
)
rf input power (rfin)(Vdd = +5Vdc)
Channel Temperature
Continuous pdiss (T = 85 °C)
(derate 12.8 mw/°C above 85 °C)
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
+5.5V
+10 dBm
150 °C
0.83 w
78 °C/w
-65 to +150 °C
-40 to +85 °C
note: Amplifier will operate over full voltage range shown above
eleCTrosTATiC sensiTiVe DeViCe
oBserVe HAnDlinG preCAUTions
9
Amplifiers - lineAr & power - smT
9-4
Outline Drawing
noTes:
1. leADfrAme mATeriAl: Copper AlloY
2. Dimensions Are in inCHes [millimeTers]
3. leAD spACinG TolerAnCe is non-CUmUlATiVe
4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm.
pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm.
5. pACKAGe wArp sHAll noT eXCeeD 0.05mm.
6. All GroUnD leADs AnD GroUnD pADDle mUsT Be
solDereD To pCB rf GroUnD.
7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD
lAnD pATTern.
Package Information
part number
HmC451lp3
HmC451lp3e
package Body material
low stress injection molded plastic
roHs-compliant low stress injection molded plastic
lead finish
sn/pb solder
100% matte sn
msl rating
msl1
msl1
[1]
package marking
[3]
451
XXXX
451
XXXX
[2]
[1] max peak reflow temperature of 235 °C
[2] max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC451LP3 / 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 18 GHz
Pin Descriptions
pin number
1, 2, 4 - 9, 11,
12, 14, 16
3
function
n/C
rfin
rfoUT
Description
This pin may be connected to rf/DC ground.
performance will not be affected.
This pin is AC coupled
and matched to 50 ohms.
This pin is AC coupled
and matched to 50 ohms.
interface schematic
9
Amplifiers - lineAr & power - smT
10
13
Vdd2
power supply Voltage for the amplifier. external bypass
capacitors of 100 pf, 1,000 pf and 2.2 µf are required.
15
Vdd1
power supply Voltage for the amplifier. external bypass
capacitors of 100 pf, 1,000 pf and 2.2 µf are required.
GnD
package bottom must be connected to rf/DC ground.
Application Circuit
Component
C1, C2
C3, C4
C5, C6
Value
100 pf
1,000 pf
2.2 µf
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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