AP75N07GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
Halogen Free & RoHS Compliant
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
75V
11mΩ
80A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP75N07GP)
are available for low-profile applications.
G
D
S
TO-220(P)
G
D
S
TO-263(S)
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
4
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
75
+20
80
70
320
300
2
450
-55 to 175
-55 to 175
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
5
Value
0.5
40
62
Units
℃/W
℃/W
℃/W
1
201212283
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
AP75N07GS/P-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
75
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.08
-
-
120
-
-
-
83
10
51
15
73
340
200
4270
690
320
1.8
Max.
-
-
11
3
-
1
250
+100
130
-
-
-
-
-
-
6830
-
-
2.7
Units
V
V/℃
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
V
GS
=10V, I
D
=40A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=40A
V
DS
=75V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=40A
V
DS
=60V
V
GS
=4.5V
V
DD
=40V
I
D
=30A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=60V
,
V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting T
j
=25
o
C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=30A.
4.Package limitation current is 80A .
5.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
T
j
=25℃, I
S
=40A, V
GS
=0V
I
S
=40A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
90
235
Max.
1.5
-
-
Units
V
ns
nC
2
AP75N07GS/P-HF
280
200
T
C
= 25
o
C
240
I
D
, Drain Current (A)
200
I
D
, Drain Current (A)
10V
7.0 V
5.0V
4.5V
T
C
= 175 C
160
o
10V
7.0 V
5.0V
4.5V
120
160
120
80
V
G
=3.0V
80
V
G
=3.0V
40
40
0
0
3
6
9
12
0
0
3
6
9
12
15
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
2.4
I
D
=20A
T
C
=25
o
C
2.0
I
D
=40A
V
G
=10V
16
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
1.6
1.2
12
0.8
8
0.4
25
50
75
100
125
150
175
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
13
20
15
12
T
j
=175 C
10
o
T
j
=25 C
o
R
DS(ON)
(m
Ω
)
I
S
(A)
V
GS
=4.5V
11
V
GS
=10V
5
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
9
0
20
40
60
80
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
AP75N07GS/P-HF
f=1.0MHz
14
10000
12
V
GS
, Gate to Source Voltage (V)
I
D
=40A
10
C
iss
8
V
DS
= 4 0 V
V
DS
= 48 V
V
DS
= 60 V
C (pF)
1000
6
C
oss
C
rss
4
2
0
0
40
80
120
160
200
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
DUTY=0.5
100
100us
0.2
I
D
(A)
0.1
1ms
10
0.1
0.05
10ms
P
DM
t
0.02
0.01
T
T
C
=25
o
C
Single Pulse
1
100ms
DC
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
SINGLE PULSE
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V
DS
=5V
T
j
=25 C
o
T
j
=175 C
o
V
G
Q
G
I
D
, Drain Current (A)
80
4.5V
Q
GS
Q
GD
40
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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