HMC717LP3 / 717LP3E
v02.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Features
Noise figure: 1.1 dB
Gain: 16.5 dB
output ip3: +31.5 dBm
single supply: +3V to +5V
16 lead 3x3mm QfN package: 9 mm
2
7
Amplifiers - low Noise - smT
Typical Applications
The HmC717lp3(e) is ideal for:
• fixed wireless and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• public safety radio
• Access points
Functional Diagram
General Description
The HmC717lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for fixed wireless
and lTe/wimAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
16.5 dB gain and +31.5 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC717lp3(e) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application.
Electrical Specifications
parameter
frequency range
Gain
Gain Variation over Temperature
Noise figure
input return loss
output return loss
T
A
= +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V
[1] [2]
Vdd = +3V
min.
Typ.
4.8 - 6.0
12
14.3
0.01
1.25
13
13
12
14
15
25.5
31
40
15
1.5
13.5
max.
min.
Vdd = +5V
Typ.
4.8 - 6.0
16.5
0.01
1.1
13
18
18.5
19.5
31.5
73
100
1.4
max.
Units
mHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
output power for 1 dB Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
Total supply Current (idd)
[1] rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC717LP3 / 717LP3E
v02.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Gain vs. Temperature
[1]
25
Broadband Gain & Return Loss
[1][2]
25
20
15
RESPONSE (dB)
10
0
-5
-10
-15
-20
-25
-30
1
2
3
4
5
6
7
FREQUENCY (GHz)
8
9
10
S11
S21
7
Amplifiers - low Noise - smT
7-2
21
GAIN (dB)
5
17
13
+25C
+85C
-40C
9
Vdd=5V
Vdd=3V
S22
5
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
6.5
Gain vs. Temperature
[2]
25
Input Return Loss vs. Temperature
[1]
0
21
RETURN LOSS (dB)
-5
+25C
+85C
-40C
GAIN (dB)
17
-10
13
+25C
+85C
-40C
9
-15
5
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
6.5
-20
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
6.5
Output Return Loss vs. Temperature
[1]
0
+25C
+85C
-40C
Reverse Isolation vs. Temperature
[1]
-20
-25
ISOLATION (dB)
-30
-35
-40
-45
-50
4.5
+25C
+85C
-40C
-5
RETURN LOSS (dB)
-10
-15
-20
-25
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
6.5
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
6.5
[1] Vdd = 5V, rbias = 2kΩ
[2] Vdd = 3V, rbias = 20kΩ
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC717LP3 / 717LP3E
v02.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
P1dB vs. Temperature
[1] [2]
24
22
20
P1dB (dBm)
18
16
14
12
10
Vdd=3V
+25C
+85C
-40C
Vdd=5V
7
Amplifiers - low Noise - smT
Noise Figure vs. Temperature
[1] [2] [4]
2.1
+85C
1.8
NOISE FIGURE (dB)
1.5
1.2
0.9
0.6
+25C
-40C
0.3
0
4.5
Vdd=5V
Vdd=3V
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
6.5
8
4.5
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
6.5
Psat vs. Temperature
[1] [2]
24
22
20
Psat (dBm)
Vdd=5V
Output IP3 vs. Temperature
[1] [2]
40
37
34
IP3 (dBm)
31
28
25
22
19
6.5
16
4.5
Vdd=3V
+25C
+85C
-40C
Vdd=5V
18
16
14
12
10
8
4.5
Vdd=3V
+25C
+85C
-40C
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
4.9
5.3
5.7
FREQUENCY (GHz)
6.1
6.5
Output IP3 and Total Supply Current vs.
Supply Voltage @ 4800 MHz
[3]
36
34
32
IP3 (dBm)
30
28
26
24
2.7
3.1
3.5
3.9
4.3
4.7
5.1
Voltage Supply (V)
Idd
IP3
Output IP3 and Total Supply Current vs.
Supply Voltage @ 5900 MHz
[3]
36
34
32
IP3 (dBm)
Idd (mA)
30
28
26
24
2.7
3.1
3.5
3.9
4.3
4.7
5.1
Voltage Supply (V)
Idd
IP3
95
80
65
50
35
20
5
5.5
95
80
65
Idd (mA)
50
35
20
5
5.5
[1] Vdd = 5V, rbias = 2k Ω
[2] Vdd = 3V, rbias = 20kΩ
[3] rbias = 2kΩ for Vdd = 5V, rbias = 20kΩ for Vdd = 3V
[4] measurement reference plane shown on evaluation pCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC717LP3 / 717LP3E
v02.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Power Compression @ 4800 MHz
[2]
25
20
15
10
5
0
-5
-10
-20
Pout
Gain
PAE
Power Compression @ 4800 MHz
[1]
25
Pout (dBm), GAIN (dB), PAE (%)
20
15
10
5
0
-5
-10
-20
Pout
Gain
PAE
7
Amplifiers - low Noise - smT
1.6
1.5
NOISE FIGURE (dB)
1.4
1.3
1.2
1.1
1
Pout (dBm), GAIN (dB), PAE (%)
-15
-10
-5
INPUT POWER (dBm)
0
5
-17
-14
-11
-8
-5
INPUT POWER (dBm)
-2
1
4
Power Compression @ 5900 MHz
[1]
25
Pout (dBm), GAIN (dB), PAE (%)
20
15
10
5
0
-5
-10
-20
Pout
Gain
PAE
Power Compression @ 5900 MHz
[2]
25
Pout (dBm), GAIN (dB), PAE (%)
20
15
10
5
0
-5
-10
-20
Pout
Gain
PAE
-16
-12
-8
-4
0
INPUT POWER (dBm)
4
8
-15
-10
-5
INPUT POWER (dBm)
0
5
Gain, Power & Noise Figure
vs. Supply Voltage @ 4800 MHz
[3]
22
20
Gain (dB) & P1dB (dBm)
18
16
14
12
10
8
2.7
3.1
3.5
3.9
4.3
4.7
5.1
Voltage Supply (V)
NF
P1dB
Gain
Gain, Power & Noise Figure
vs. Supply Voltage @ 5900 MHz
[3]
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
5.5
Gain (dB) & P1dB (dBm)
NOISE FIGURE (dB)
22
20
18
16
14
12
10
2.7
3.1
3.5
3.9
4.3
4.7
5.1
Voltage Supply (V)
NF
P1dB
Gain
5.5
[1] Vdd = 5V, rbias = 2k Ω
[2] Vdd = 3V, rbias = 20kΩ
[3] rbias = 2kΩ for Vdd = 5V, rbias = 20kΩ for Vdd = 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
HMC717LP3 / 717LP3E
v02.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Gain, Noise Figure & Rbias @ 4800 MHz
20
2.2
Vdd=3V
Vdd=5V
7
Amplifiers - low Noise - smT
Output IP3 vs. Rbias @ 4800 MHz
32
30
28
IP3 (dBm)
26
24
22
20
100
Vdd=3V
Vdd=5V
17
14
GAIN (dB)
11
8
5
2
100
1000
Rbias (Ohms)
10000
2
NOISE FIGURE (dB)
1.8
1.6
1.4
1.2
1
100000
1000
10000
Rbias (Ohms)
100000
Output IP3 vs. Rbias @ 5900 MHz
35
Vdd=3V
Vdd=5V
Gain, Noise Figure & Rbias @ 5900 MHz
18
16
14
GAIN (dB)
12
10
Vdd=3V
Vdd=5V
1.7
1.6
NOISE FIGURE (dB)
1.5
1.4
1.3
1.2
1.1
1000
Rbias (Ohms)
10000
100000
32
IP3 (dBm)
29
26
23
8
6
100
20
100
1000
10000
Rbias (Ohms)
100000
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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