HMC716LP3 / 716LP3E
v02.1009
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
Features
Noise figure: 1 dB
Gain: 18 dB
output ip3: +33 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm QfN package: 9 mm
2
7
Amplifiers - low Noise - smT
Typical Applications
The HmC716lp3(e) is ideal for:
• fixed wireless and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• public safety radio
• Access points
Functional Diagram
General Description
The HmC716lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for fixed wireless
and lTe/wimAX/4G basestation front-end receivers
operating between 3.1 and 3.9 GHz. The amplifier
has been optimized to provide 1 dB noise figure,
18 dB gain and +33 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent and the lNA requires minimal external
matching and bias decoupling components. The
HmC716lp3(e) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the lNA for each application.
Electrical Specifications
parameter
frequency range
Gain
Gain Variation over Temperature
Noise figure
input return loss
output return loss
T
A
= +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V
[1]
Vdd = +3V
min.
Typ.
3.1 - 3.9
13
17
0.01
1
25
13
12
15
16.5
26
41
55
16
1.3
15.5
max.
min.
Vdd = +5V
Typ.
3.1 - 3.9
18
0.01
1
30
16
19
20.5
33
65
90
1.3
max.
Units
mHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
output power for 1 dB Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
supply Current (idd)
[1] rbias resistor sets current, see application circuit herein
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC716LP3 / 716LP3E
v02.1009
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
Gain vs. Temperature
[1]
26
24
22
GAIN (dB)
Broadband Gain & Return Loss
[1] [2]
30
20
RESPONSE (dB)
10
0
-10
-20
-30
-40
1
2
3
4
5
6
FREQUENCY (GHz)
7
8
5V
3V
S11
S22
S21
7
+25C
+85C
-40C
20
18
16
14
12
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
Gain vs. Temperature
[2]
26
24
22
GAIN (dB)
20
18
16
14
12
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
+25C
+85C
-40C
Input Return Loss vs. Temperature
[1]
0
RETURN LOSS (dB)
-10
+25C
+85C
-40C
-20
-30
-40
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
Output Return Loss vs. Temperature
[1]
0
+25C
+85C
-40C
Reverse Isolation vs. Temperature
[1]
-15
-20
ISOLATION (dB)
-25
-30
-35
-40
-45
+25C
+85C
-40C
-5
RETURN LOSS (dB)
-10
-15
-20
-25
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
[1] Vdd = 5V, rbias = 820 Ω
[2] Vdd = 3V, rbias = 47k Ω
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-2
Amplifiers - low Noise - smT
HMC716LP3 / 716LP3E
v02.1009
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
P1dB vs. Temperature
[1] [2]
24
Vdd=5V
7
Amplifiers - low Noise - smT
Noise Figure vs. Temperature
[1] [2] [4]
1.8
1.5
NOISE FIGURE (dB)
1.2
0.9
0.6
-40C
+25C
+85C
21
P1dB (dBm)
18
Vdd=3V
15
0.3
0
3
3.2
Vdd=5V
Vdd=3V
12
+25C
+85C
-40C
9
3.4
3.6
FREQUENCY (GHz)
3.8
4
3
3.2
3.4
3.6
3.8
4
FREQUENCY (GHz)
Psat vs. Temperature
[1] [2]
24
Vdd=5V
Output IP3 vs. Temperature
[1] [2]
45
41
37
IP3 (dBm)
+25C
+85C
-40C
21
Psat (dBm)
Vdd=5V
18
33
29
15
Vdd=3V
+25C
+85C
-40C
12
25
Vdd=3V
9
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
21
3
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4
Output IP3 and Supply Current vs.
Supply Voltage @ 3300 MHz
[3]
36
34
32
IP3 (dBm)
30
28
26
24
2.7
3.1
3.5
3.9
4.3
4.7
5.1
VOLTAGE SUPPLY (V)
Idd
IP3
Output IP3 and Supply Current vs.
Supply Voltage @ 3800 MHz
[3]
95
80
65
IP3 (dBm)
Idd (mA)
50
35
20
5
5.5
36
34
32
30
28
26
24
2.7
3.1
3.5
3.9
4.3
4.7
5.1
VOLTAGE SUPPLY (V)
Idd
IP3
95
80
65
Idd (mA)
50
35
20
5
5.5
[1] Vdd = 5V, rbias = 820 Ω
[2] Vdd = 3V, rbias = 47kΩ
[3] rbias = 820 Ω for Vdd = 5V, rbias = 47k Ω for Vdd = 3V
[4] measurement reference plane shown on evaluation pCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC716LP3 / 716LP3E
v02.1009
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
Power Compression @ 3300 MHz
[2]
35
Pout (dBm), GAIN (dB), PAE (%)
30
25
20
15
10
5
0
-5
-20 -18
-16
-14 -12 -10 -8
-6
-4
INPUT POWER (dBm)
-2
Pout
Gain
PAE
Power Compression @ 3300 MHz
[1]
40
Pout (dBm), GAIN (dB), PAE (%)
35
30
25
20
15
10
5
0
-5
-20
-15
-10
-5
INPUT POWER (dBm)
0
5
Pout
Gain
PAE
7
Amplifiers - low Noise - smT
1.4
1.3
NOISE FIGURE (dB)
1.2
1.1
1
0.9
0.8
0
2
Power Compression @ 3300 MHz
[1]
35
Pout (dBm), GAIN (dB), PAE (%)
30
25
20
15
10
5
0
-5
-10
-20
-16
-12
-8
-4
0
INPUT POWER (dBm)
Pout
Gain
PAE
Power Compression @ 3800 MHz
[2]
32
Pout (dBm), GAIN (dB), PAE (%)
26
20
14
8
2
-4
-10
-20
Pout
Gain
PAE
4
8
-15
-10
-5
INPUT POWER (dBm)
0
5
Gain, Power & Noise Figure
vs. Supply Voltage @ 3300 MHz
[3]
24
22
GAIN (dB) & P1dB (dBm)
20
18
16
14
12
2.7
3.1
3.5
3.9
4.3
4.7
5.1
VOLTAGE SUPPLY (V)
NF
P1dB
Gain
Gain, Power & Noise Figure
vs. Supply Voltage @ 3800 MHz
[3]
1.4
1.3
1.2
1.1
1
0.9
0.8
5.5
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
23
21
19
17
15
13
11
2.7
3.1
3.5
3.9
4.3
4.7
5.1
VOLTAGE SUPPLY (V)
NF
P1dB
Gain
5.5
[1] Vdd = 5V, rbias = 820 Ω
[2] Vdd = 3V, rbias = 47k Ω
[3] rbias = 820 Ω for Vdd = 5V, rbias = 47k for Vdd 3V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-4
HMC716LP3 / 716LP3E
v02.1009
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
Gain, Noise Figure & Rbias @ 3300 MHz
22
20
Vdd=3V
Vdd=5V
7
Amplifiers - low Noise - smT
Output IP3 vs. Rbias @ 3300 MHz
40
1.3
1.25
NOISE FIGURE (dB)
1.2
1.15
1.1
1.05
1
1000
Rbias (Ohms)
10000
100000
36
Vdd=3V
Vdd=5V
IP3 (dBm)
GAIN (dB)
1000
10000
Rbias (Ohms)
100000
32
18
16
14
28
24
12
10
100
20
100
Output IP3 vs. Rbias @ 3800 MHz
40
Gain, Noise Figure & Rbias @ 3800 MHz
20
1.25
Vdd=3V
Vdd=5V
36
Vdd=3V
Vdd=5V
18
16
GAIN (dB)
14
12
1.2
NOISE FIGURE (dB)
1.15
1.1
1.05
1
0.95
IP3 (dBm)
32
28
24
10
8
100
1000
Rbias (Ohms)
10000
20
100
1000
10000
Rbias (Ohms)
100000
100000
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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