Naina Semiconductor Ltd.
emiconductor
Thyristor – Diode Module
Features
•
•
•
•
•
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
Available in both M1 & M2 package
100NTD
100
Maximum Ratings
(T
A
= 25
0
C unless otherwise noted)
Parameter
Maximum average forward current @ T
J
=
0
85 C
Maximum average RMS forward current
Maximum non-repetitive surge current @ t
= 10ms
Maximum I t for fusing @ t = 10ms
2
Symbol
I
F(AV)
I
F(RMS)
I
FSM
It
2
Values
100
220
2000
20
Units
A
A
A
kA s
2
M1 & M2 PACKAGE
Thermal & Mechanical Specifications
(T
A
= 25
0
C unless otherwise noted)
Parameter
Operating junction temperature range
Thermal resistance, junction to case
Symbol
T
J
R
th(JC)
Values
-65 to +1
65 +125
1.1
0
Units
0
C
C/W
Electrical Characteristics
(T
A
= 25
0
C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
I
T(max)
V
RRM
V
FM
I
GT
V
GT
I
H
I
L
dv/dt
V
ISO
Values
100
200 to 1600
1.55
100
2
5 to 100
400
300
2500
Units
A
V
V
A
V
mA
mA
V/µs
V
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120
4205450
0120-4273653
sales@nainasemi.com • www.nainasemi.com
Naina Semiconductor Ltd.
emiconductor
100NTD
100
ALL DIMENSIONS IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120
4205450
0120-4273653
sales@nainasemi.com • www.nainasemi.com
ADI 工业技术
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