SGA6586ZDC
to 4000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA6586Z
DC to 4000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA6586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
24
32
Gain & Return Loss vs. Freq. @T
L
=+25°C
GAIN
Features
High Gain: 18.4dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Applications
0
-10
IRL
ORL
Return Loss (dB)
SiGe BiCMOS
Si BiCMOS
Gain (dB)
16
-20
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
8
0
0
1
2
3
Frequency (GHz)
4
5
-30
-40
Parameter
Small Signal Gain
Min.
Specification
Typ.
23.8
18.4
16.7
21.5
19.0
33.8
32.2
2500
Max.
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Condition
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
21.4
dB
1950MHz
Output Return Loss
18.0
dB
1950MHz
Noise Figure
3.1
dB
1950MHz
Device Operating Voltage
4.5
4.9
5.3
V
Device Operating Current
72
80
88
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, R
BIAS
=39Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100916
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGA6586Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Rating
160
7
+16
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Typical Performance at Key Operating Frequencies
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
16.7
30.2
16.8
17.4
17.4
19.7
3.7
3500
MHz
Small Signal Gain
dB
25.8
23.8
18.4
Output Third Order Intercept Point
dBm
32.2
33.8
32.2
Output Power at 1dB Compression
dBm
20.9
21.5
18.0
Input Return Loss
dB
32.2
23.3
22.8
21.4
Output Return Loss
dB
16.8
18.2
23.0
18.0
Reverse Isolation
dB
24.0
23.9
23.6
21.2
Noise Figure
dB
2.5
2.7
3.1
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm, R
BIAS
=39Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
14.4
14.2
16.6
OIP
3
vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
40
35
OIP
3
(dBm)
P
1dB
vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
24
22
P
1dB
(dBm)
20
30
25
T
L
=+25ºC
18
16
14
T
L
=+25ºC
20
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
Noise Figure vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
5
Noise Figure (dB)
4
3
2
T
L
=+25ºC
1
0
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100916
SGA6586Z
|
S
|
vs. Frequency
21
|
S
|
vs. Frequency
11
V
D
= 4.9 V, I
D
= 10 mA (Typ.)
32
24
S
21
(dB)
S
11
(dB)
0
V
D
= 4.9 V, I
D
= 80 mA
-10
16
8
-20
T
L
0
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
-30
T
L
-40
+25°C
-40°C
+85°C
5
0
1
2
3
Frequency (GHz)
4
5
|
S
|
vs. Frequency
12
|
S
|
vs. Frequency
22
0
-10
S
12
(dB)
-20
-30
V
D
= 4.9 V, I
D
= 80 mA
0
-10
S
22
(dB)
-20
-30
V
D
= 4.9 V, I
D
= 80 mA
T
L
-40
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
T
L
-40
5
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
5
DS100916
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGA6586Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-
ble.
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
Application Schematic
Frequency (Mhz)
V
S
R
BIAS
1 uF
1000
pF
Reference
Designator
500
850
1950
2400
3500
C
B
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
C
D
L
C
RF in
C
B
4
1
SGA6586Z
3
2
C
B
Recommended Bias Resistor Values for I
D
=80mA
R
BIAS
=( V
S
-V
D
) / I
D
RF out
Supply Voltage(V
S
)
R
BIAS
6V
13
8V
39
10 V
62
12 V
91
Note: R
BIAS
provides DC bias stability over temperature.
Evaluation Board Layout
V
S
R
BIAS
1 uF
1000 pF
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
L
C
C
D
C
B
A65
C
B
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DS100916
SGA6586Z
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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