SGA6386ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA6386Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA6386Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high F
T
and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Gain & Return Loss vs. Frequency
Features
Broadband Operation: DC to
5000MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Applications
20
GAIN
V
D
= 4.9 V, I
D
= 80 mA (Typ.)
0
-10
Return Loss (dB)
15
Gain (dB)
10
5
0
0
1
2
3
Frequency (GHz)
4
5
ORL
IRL
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
-20
T
L
=+25ºC
-30
-40
Parameter
Small Signal Gain
Min.
14.0
Specification
Typ.
15.4
13.5
12.5
21.0
19.0
36.0
34.0
5000
Max.
16.9
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Condition
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
26.7
dB
1950MHz
Output Return Loss
16.2
dB
1950MHz
Noise Figure
4.0
dB
1950MHz
Device Operating Voltage
4.6
4.9
5.4
V
Device Operating Current
72
80
88
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=39Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGA6386Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
Rating
160
7
+18
+150
-40 to +85
+150
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
Typical Performance at Key Operating Frequencies
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
12.5
32.2
18.6
20.4
15.1
19.2
4.2
3500
MHz
10.7
27.9
16.3
16.0
14.2
17.2
4.6
Small Signal Gain
dB
15.9
15.5
15.4
13.5
Output Third Order Intercept Point
dBm
37.1
37.1
36.0
34.0
Output Power at 1dB Compression
dBm
20.2
20.5
21.0
19.0
Input Return Loss
dB
23.8
23.9
25.6
26.7
Output Return Loss
dB
13.2
14.5
16.6
16.2
Reverse Isolation
dB
20.0
20.2
20.4
19.9
Noise Figure
dB
3.7
3.4
3.6
4.0
Test Conditions: V
S
=8V, I
D
=80mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=39Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
OIP
3
vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
40
36
OIP
3
(dBm)
32
28
+25°C
P
1dB
vs. Frequency
V
D
= 4.9 v, I
D
= 80 mA
22
20
P
1dB
(dBm)
18
16
+25°C
24
20
0.0
0.5
T
L
-40°C
+85°C
14
12
T
L
0.0
0.5
1.0
-40°C
+85°C
1.0
1.5
2.0
2.5
3.0
3.5
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
7
Noise Figure (dB)
6
5
4
3
2
0
1
2
Frequency (GHz)
3
4
T
L
=+25ºC
T
L
=+25ºC
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100915
SGA6386Z
|
S
21
|
vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
20
15
|S
21
| (dB)
10
5
|S
11
| (dB)
0
-10
-20
-30
|
S
11
|
vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
T
L
0
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
T
L
-40
+25°C
-40°C
+85°C
5
0
1
2
3
Frequency (GHz)
4
5
|
S
12
|
vs. Frequency
-10
|
S
22
|
vs. Frequency
0
-10
|S
22
| (dB)
-20
-30
V
D
= 4.9 V, I
D
= 80 mA
V
D
= 4.9 V, I
D
= 80 mA
-15
|S
12
| (dB)
-20
-25
T
L
-30
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
T
L
-40
5
+25°C
-40°C
+85°C
0
1
2
3
Frequency (GHz)
4
5
95
90
V
D
vs. I
D
over Temperature for fixed
V
S
= 8 V, R
BIAS
= 39 ohms *
V
D
vs. Temperature for Constant I
D
= 80 mA
5.5
5.3
V
D
(Volts)
5.1
4.9
4.7
4.5
+85°C
85
I
D
(mA)
80
75
-40°C
+25°C
70
65
4.5
4.7
4.9
V
D
(Volts)
5.1
5.3
-40
-15
10
35
Temperature(°C)
60
85
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over temperature.
DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGA6386Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.
Connection to ground. For optimum RF performance use via holes as close to ground leads as possible to reduce lead
inductance.
RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for proper oper-
ation.
Application Schematic
pp
Frequency (Mhz)
V
S
R
BIAS
1000
pF
Reference
Designator
500
850
1950
2400
3500
C
B
C
D
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
1 uF
C
D
L
C
L
C
RF in
C
B
4
1
SGA6386Z
3
2
C
B
Recommended Bias Resistor Values for I
D
=80mA
R
BIAS
=( V
S
-V
D
) / I
D
RF out
Supply Voltage(V
S
)
R
BIAS
6V
13
8V
39
10 V
62
12 V
91
Note: R
BIAS
provides DC bias stability over temperature.
Evaluation Board Layout
V
S
R
BIAS
1000 pF
1 uF
C
D
L
C
C
B
A63
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
C
B
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100915
SGA6386Z
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS100915
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
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