IRF9395MPbF
DirectFET dual P-Channel Power MOSFET
Typical values (unless otherwise specified)
V
DSS
Applications
l
Isolation Switch for Input Power or Battery Application
V
GS
Q
gd
15nC
R
DS(on)
Q
gs2
3.2nC
R
DS(on)
Q
oss
23nC
-30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V
Q
g tot
32nC
Q
rr
62nC
V
gs(th)
-1.8V
Features and Benefits
l
Environmentaly Friendly Product
l
RoHs Compliant Containing no Lead,
Q1-Q2
G
G
no Bromide and no Halogen
l
Dual Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
D
S
S
S
S
D
MC
MP
MC
DirectFET ISOMETRIC
Description
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced
DirectFET
TM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
Orderable part number
IRF9395MTRPbF
IRF9395MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
24
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
g
e
e
f
-VGS, Gate-to-Source Voltage (V)
-30
±20
-14
-11
-75
-110
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
ID= -11A
VDS= -24V
VDS= -15V
VDS= -6V
A
20
16
12
8
4
0
2
4
6
8
10
12
14
T J = 125°C
ID = -14A
T J = 25°C
16
18
20
80
-VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1
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2014 International Rectifier
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February 24, 2014
IRF9395MPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre- Vth Gate-to-Source Charge
Post -Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.012
5.3
9.0
-1.8
-6.1
–––
–––
–––
–––
–––
64
32
6.5
3.2
15
7.3
18.2
23
15
16
142
76
121
3241
820
466
–––
–––
7.0
V
Conditions
11.9
-2.4
V
V
DS
= V
GS
, I
D
= -50μA
––– mV/°C
V
DS
= -24V, V
GS
= 0V
-1.0
μA
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-150
V
GS
= -20V
-100
nA
V
GS
= 20V
100
V
DS
= -15V, I
D
= -11A
–––
S
V
DS
= -15V, V
GS
= -10V, I
D
= -11A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Ω
V
GS
= 0V, I
D
= -250μA
V/°C Reference to 25°C, I
D
= -1.0mA
V
GS
= -10V, I
D
= -14A
mΩ
V
GS
= -4.5V, I
D
= -11 A
h
h
V
DS
= -15V
nC
V
GS
= -4.5V
I
D
= -11A
See Fig.15
V
DS
= -16V, V
GS
= 0V
V
DD
= -15V, V
GS
= -4.5V
ns
I
D
= -11A
R
G
= 1.8Ω
See Fig.17
V
GS
= 0V
V
DS
= -15V
ƒ = 1.0KHz
Ãh
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
43
62
-57
A
-110
-1.2
65
93
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
D
G
g
S
p-n junction diode.
T
J
= 25°C, I
S
= -11A, V
GS
= 0V
T
J
= 25°C, I
F
= -11A, ,V
DD
= -15V
h
di/dt = 260A/μs
h
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.1
1.3
57
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case ,
Junction-to-PCB Mounted
Linear Derating Factor
e
i
j
fk
Parameter
Typ.
–––
12.5
20
–––
1.0
0.02
Max.
60
–––
–––
2.2
–––
Units
°C/W
e
W/°C
100
10
Thermal Response ( Z thJA )
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
τ
A
Ri (°C/W)
10.609
3.5414
24.659
21.032
τ
J
0.239813
0.007823
2.632793
18.15739
τi
(sec)
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
3
©
2014 International Rectifier
Mounted to a PCB
with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Submit Datasheet Feedback
February 24, 2014
IRF9395MPbF
1000
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
1000
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
-I D, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
-2.6V
1
1
-2.6V
0.1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = -15V
≤60μs
PULSE WIDTH
100
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
1.5
ID = -14A
V GS = -10V
V GS = -4.5V
-I D, Drain-to-Source Current (A)
10
1.0
1
T J = 150°C
T J = 25°C
T J = -40°C
1
2
3
4
5
0.1
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
38
34
30
Vgs = -4.5V
Vgs = -6.0V
Vgs = -8.0V
Vgs = -10V
Vgs = -12V
T J = 25°C
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
26
22
18
14
10
6
100
1
10
-VDS, Drain-to-Source Voltage (V)
100
2
0
25
50
75
100
125
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
©
2014 International Rectifier
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
February 24, 2014
-I D, Drain Current (A)
Submit Datasheet Feedback
IRF9395MPbF
1000
T J = 150°C
T J = 25°C
T J = -40°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μs
1ms
10
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10
100
DC
-I SD, Reverse Drain Current (A)
100
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, Source-to-Drain Voltage (V)
-I D, Drain-to-Source Current (A)
100
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
80
-VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
3.0
-I D, Drain Current (A)
60
2.5
2.0
40
1.5
ID = 50μA
20
ID = 250μA
1.0
ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12.
Maximum Drain Current vs. Case Temperature
1200
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
-1.2A
-1.9A
BOTTOM -11A
1000
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
©
2014 International Rectifier
Submit Datasheet Feedback
February 24, 2014
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