The SGA5386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-
figuration featuring one-micron emitters provides high F
T
and excellent thermal per-
formance. The heterojunction increases breakdown voltage and minimizes leakage
current between junctions. Cancellation of emitter junction non-linearities results in
higher suppression of intermodulation products. Only two DC-blocking capacitors, a
bias resistor, and an optional RF choke are required for operation.
Features
High Gain: 14.9dB at
1950MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Gain (dB)
15
IRL
Applications
Gain & Return Loss vs. Frequency
20
GAIN
V
D
= 3.6 V, I
D
= 60 mA (Typ.)
0
-10
-20
Return Loss (dB)
10
5
ORL
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
T
L
=+25ºC
-30
-40
0
0
1
2
3
Frequency (GHz)
4
5
Parameter
Small Signal Gain
Min.
15.2
Specification
Typ.
16.6
14.9
14.0
17.0
14.7
32.0
29.0
5000
Max.
18.3
Unit
dB
dB
dB
dBm
dBm
dBm
dBm
MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
850MHz
1950MHz
>10dB
Condition
Output Power at 1dB Compression
Output Third Intercept Point
Bandwidth Determined by Return
Loss
Input Return Loss
18.5
dB
1950MHz
Output Return Loss
30.0
dB
1950MHz
Noise Figure
4.0
dB
1950MHz
Device Operating Voltage
3.1
3.6
4.1
V
Device Operating Current
54
60
66
mA
Thermal Resistance
97
°C/W
(Junction - Lead)
Test Conditions: V
S
=8V, I
D
=60mA Typ., OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm, R
BIAS
=75Ω, T
L
=25°C, Z
S
=Z
L
=50Ω
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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