IRF9383MPbF
DirectFET
®
P-Channel Power MOSFET
Applications
l
Isolation Switch for Input Power or Battery Application
l
High Side Switch for Inverter Applications
Typical values (unless otherwise specified)
V
DSS
Q
g tot
67nC
V
GS
Q
gd
29nC
R
DS(on)
Q
gs2
9.4nC
R
DS(on)
Q
oss
59nC
-30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
Features and Benefits
l
Environmentaly Friendly Product
l
RoHs Compliant Containing no Lead,
Q
rr
315nC
V
gs(th)
-1.8V
no Bromide and no Halogen
l
Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
S
D
G
S
D
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
MC
DirectFET ISOMETRIC
Description
The IRF9383MTRPbF combines the latest HEXFET
®
P-Channel Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET
®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Orderable part number
IRF9383MTRPbF
IRF9383MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
®
®
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4800
1000
Note
"TR1" suffix EOL notice #264
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
12
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
g
e
e
f
-VGS, Gate-to-Source Voltage (V)
-30
±20
-22
-17
-160
-180
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
A
10
8
6
4
2
0
2
4
6
8
10
ID = -22A
ID= -18A
VDS= -24V
VDS= -15V
VDS= -6.0V
TJ = 125°C
T J = 25°C
12
14
16
18
20
100 120 140 160 180
-VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET
®
Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1
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June 2, 2015
IRF9383MPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre- Vth Gate-to-Source Charge
Post -Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
Typ. Max. Units
–––
–––
V
Conditions
––– 0.0159 –––
–––
2.3
2.9
–––
-1.3
–––
–––
–––
–––
–––
56
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.8
-1.8
-5.9
–––
–––
–––
–––
–––
130
67
12
9.4
29
16.6
38.4
59
6.5
29
160
115
110
7305
1780
1030
4.8
-2.4
–––
V
GS
= 0V, I
D
= -250μA
V/°C Reference to 25°C, I
D
= -1.0mA
V
GS
= -10V, I
D
= -22A
mΩ
V
GS
= -4.5V, I
D
= -18A
h
h
V
V
DS
= V
GS
, I
D
= -150μA
mV/°C
V
DS
= -24V, V
GS
= 0V
-1.0
μA
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-150
V
GS
= -20V
-100
nA
V
GS
= 20V
100
V
DS
= -10V, I
D
= -18A
–––
S
V
DS
= -15V, V
GS
= -10V, I
D
= -18A
–––
–––
V
DS
= -15V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Ω
nC
V
GS
= -4.5V
I
D
= -18A
See Fig.15
V
DS
= -24V, V
GS
= 0V
V
DD
= -15V, V
GS
= -4.5V
ns
I
D
= -18A
R
G
= 1.8Ω
See Fig.17
V
GS
= 0V
V
DS
= -15V
ƒ = 1.0KHz
Ãh
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
52
315
-114
A
-180
-1.2
78
470
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
G
g
S
p-n junction diode.
T
J
= 25°C, I
S
= -18A, V
GS
= 0V
T
J
= 25°C, I
F
= -18A, ,V
DD
= -15V
h
di/dt = 500A/μs
h
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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June 2, 2015
IRF9383MPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.1
1.3
113
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
e
Junction-to-Ambient
i
Junction-to-Ambient
j
Junction-to-Case
f
,
k
Parameter
Typ.
–––
12.5
20
–––
1.0
0.02
Max.
60
–––
–––
1.1
–––
Units
°C/W
Junction-to-PCB Mounted
Linear Derating Factor
e
W/°C
100
10
Thermal Response ( Z thJA )
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
τ
A
Ri (°C/W)
2.7194
23.1599
10.2579
23.6469
0.0138004
55.766563
0.6520047
7.7259631
τi
(sec)
Ci=
τi/Ri
Ci=
τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
3
Mounted to a PCB
with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
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© 2015 International Rectifier
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June 2, 2015
IRF9383MPbF
1000
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.25V
-3.0V
-2.75V
-2.5V
1000
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.25V
-3.0V
-2.75V
-2.5V
-I D, Drain-to-Source Current (A)
100
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
-2.5V
0.1
10
-2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
≤
60μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = -15V
≤60μs
PULSE WIDTH
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
1.6
ID = -22A
1.4
V GS = -10V
V GS = -4.5V
1.2
-I D, Drain-to-Source Current (A)
100
1.0
10
T J = 150°C
T J = 25°C
T J = -40°C
1.0
1
2
3
4
5
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-VGS, Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance vs. Temperature
12
T J = 25°C
10
Vgs = -3.5V
Vgs = -4.5V
Vgs = -5.0V
Vgs = -6.0V
Vgs = -8.0V
Vgs = -10V
Vgs = -12V
Vgs = -15V
10000
Ciss
Coss
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
8
1000
Crss
6
4
100
1
10
-VDS, Drain-to-Source Voltage (V)
100
2
0
20
40
60
80 100 120 140 160 180
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
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© 2015 International Rectifier
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
Submit Datasheet Feedback
June 2, 2015
-I D, Drain Current (A)
IRF9383MPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
100μsec
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
100
T J = 150°C
T J = 25°C
T J = -40°C
10
10msec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10
100
10
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
-VSD, Source-to-Drain Voltage (V)
0.01
-V DS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
-Typical VGS(th) Gate threshold Voltage (V)
25
Fig 11.
Maximum Safe Operating Area
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = -150μA
ID = -250μA
ID = -1.0mA
ID = -1.0A
20
-I D, Drain Current (A)
15
10
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12.
Maximum Drain Current vs. Case Temperature
2500
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
-1.6A
-2.3A
BOTTOM -18A
2000
1500
1000
500
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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June 2, 2015
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