VS-10ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
Base cathode
2
DESCRIPTION/FEATURES
The VS-10ETS..SPbF rectifier series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
Vishay HPP switches and output rectifiers which
are available in identical package outlines.
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
D
2
PAK
1
Anode
3
Anode
PRODUCT SUMMARY
V
F
at 10 A
I
FSM
V
RRM
<1V
200 A
800 V/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
12.0
THREE-PHASE BRIDGE
16.0
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
10
800/1200
200
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETS08SPbF
VS-10ETS10SPbF
VS-10ETS12SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
0.5
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
170
200
130
145
1450
A
2
s
A
2
√s
A
UNITS
Document Number: 94338
Revision: 08-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-10ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
10 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
20
0.82
0.05
0.50
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Soldering temperature
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
T
S
(1)
TEST CONDITIONS
VALUES
- 40 to 150
UNITS
°C
DC operation
2.5
°C/W
62
240
2
0.07
10ETS08S
°C
g
oz.
Marking device
Case style D
2
PAK (SMD-220)
10ETS10S
10ETS12S
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94338
Revision: 08-Apr-10
VS-10ETS..SPbF High Voltage Series
Input Rectifier Diode, 10 A
Vishay High Power Products
150
140
Maximum Average
Forward Power Loss (W)
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
20
18
16
14
12
10
8
6
4
2
0
Ø
Maximum Allowable
Case Temperature (°C)
130
Ø
120
110
100
90
80
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
30°
60°
90°
120°
8
10
180°
12
Conduction period
10ETS.. Series
T
J
= 150 °C
0
2
4
6
8
10
12
14
16
0
2
4
6
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
200
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
180
Maximum Allowable
Case Temperature (°C)
Peak Half Sine Wave
Forward Current (A)
160
140
120
100
80
60
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
60°
90°
120°
0
2
4
6
8
10
180°
12
14
DC
16
18
10ETS.. Series
40
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
Maximum Average
Forward Power Loss (W)
14
12
10
8
6
4
2
0
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
240
220
200
180
160
140
120
100
80
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
RMS limit
Ø
Conduction angle
10ETS.. Series
T
J
= 150 °C
0
2
4
6
8
10
10ETS.. Series
60
40
0.01
0.1
1.0
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94338
Revision: 08-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-10ETS..SPbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
Instantaneous Forward Current (A)
100
T
J
= 25 °C
T
J
= 150 °C
10
10ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient
Thermal Impedance (°C/W)
Steady state value
(DC operation)
1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
10ETS.. Series
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94338
Revision: 08-Apr-10
VS-10ETS..SPbF High Voltage Series
Input Rectifier Diode, 10 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
10
2
E
3
T
4
S
5
12
6
S
7
TRL PbF
8
9
HPP product suffix
Current rating (10 = 10 A)
Circuit configuration:
E = Single diode
Package:
T = TO-220AC
Type of silicon:
S = Standard recovery rectifier
Voltage code x 100 = V
RRM
S = TO-220 D
2
PAK (SMD-220) version
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
08 = 800 V
10 = 1000 V
12 = 1200 V
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Document Number: 94338
Revision: 08-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
