10ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
DESCRIPTION/FEATURES
Base cathode
2
The 10ETS..S rectifier series has been optimized for very
low forward voltage drop, with moderate leakage. The glass
passivation technology used has reliable operation up to
150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product series has been designed and qualified for
industrial level.
D
2
PAK
1
Anode
3
Anode
PRODUCT SUMMARY
V
F
at 10 A
I
FSM
V
RRM
<1V
200 A
800/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
12.0
THREE-PHASE BRIDGE
16.0
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
10
800/1200
200
1.1
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
10ETS08S
10ETS10S
10ETS12S
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
0.5
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
10
170
200
130
145
1450
A
2
s
A
2
√s
A
UNITS
Document Number: 93486
Revision: 26-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
10ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
10 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
20
0.82
0.05
0.50
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Soldering temperature
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA (1)
T
S
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
2.5
°C/W
62
240
2
0.07
10ETS08S
Marking device
Case style D
2
PAK (SMD-220)
10ETS10S
10ETS12S
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
°C
g
oz.
UNITS
°C
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93486
Revision: 26-Aug-08
10ETS..S High Voltage Series
Input Rectifier Diode, 10 A
Vishay High Power Products
150
140
Maximum Average
Forward Power Loss (W)
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
20
18
16
14
12
10
8
6
4
2
0
Ø
Maximum Allowable
Case Temperature (°C)
130
Ø
120
110
100
90
80
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
30°
60°
90°
120°
8
10
180°
12
Conduction period
10ETS.. Series
T
J
= 150 °C
0
2
4
6
8
10
12
14
16
0
2
4
6
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
200
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
180
Maximum Allowable
Case Temperature (°C)
Peak Half Sine Wave
Forward Current (A)
160
140
120
100
80
60
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
60°
90°
120°
0
2
4
6
8
10
180°
12
14
DC
16
18
10ETS.. Series
40
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
Maximum Average
Forward Power Loss (W)
14
12
10
8
6
4
2
0
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
240
220
200
180
160
140
120
100
80
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No voltage
reapplied
Rated
V
RRM
reapplied
RMS limit
Ø
Conduction angle
10ETS.. Series
T
J
= 150 °C
0
2
4
6
8
10
10ETS.. Series
60
40
0.01
0.1
1.0
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93486
Revision: 26-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
10ETS..S High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 10 A
Instantaneous Forward Current (A)
100
T
J
= 25 °C
T
J
= 150 °C
10
10ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient
Thermal Impedance (°C/W)
Steady state
value
(DC operation)
1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
10ETS.. Series
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93486
Revision: 26-Aug-08
10ETS..S High Voltage Series
Input Rectifier Diode, 10 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
10
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
E
2
T
3
S
4
12
5
S
6
TRL
7
-
8
Current rating (10 = 10 A)
Circuit configuration
E = Single diode
Package
T = TO-220AC
Type of silicon
S = Standard recovery rectifier
Voltage code x 100 = V
RRM
S = TO-220 D
2
PAK (SMD-220) version
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
08 = 800 V
10 = 1000 V
12 = 1200 V
8
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
http://www.vishay.com/doc?95046
http://www.vishay.com/doc?95054
http://www.vishay.com/doc?95032
Document Number: 93486
Revision: 26-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
