VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
Base
common
cathode
+
2
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
3
- Anode
D
2
PAK (SMD-220)
1
Anode -
APPLICATIONS
• Output rectification and freewheeling in
inverters, choppers and converters
• Input rectifications where severe restrictions
conducted EMI should be met
on
PRODUCT SUMMARY
V
F
at 10 A
t
rr
V
RRM
< 1.33 V
80 ns
1000 V/1200 V
DESCRIPTION
The VS-10ETF..SPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
10 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
10
1000/1200
160
1.33
80
- 40 to 150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF10SPbF
VS-10ETF12SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 125 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
160
185
128
180
1800
A
2
s
A
2
√s
A
UNITS
Document Number: 94094
Revision: 26-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
10 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.33
22.9
0.96
0.1
4
UNITS
V
mΩ
V
mA
Fast Soft Recovery
Rectifier Diode, 10 A
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Typical snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 10 Apk
25 A/μs
25 °C
VALUES
310
4.7
1.05
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
rr
t
Q
rr
I
RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Soldering temperature
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
T
S
(1)
TEST CONDITIONS
VALUES
- 40 to 150
UNITS
°C
DC operation
1.5
°C/W
62
240
2
0.07
°C
g
oz.
10ETF10S
10ETF12S
Marking device
Case style D
2
PAK (SMD-220)
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94094
Revision: 26-Apr-10
VS-10ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
150
24
Vishay High Power Products
Maximum Allowable Case
Temperature (°C)
145
140
Maximum Average Forward
Power Loss (W)
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
20
16
12
Ø
135
130
125
120
30°
115
0
2
4
6
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
8
4
0
Ø
Conduction period
10ETF.. Series
T
J
= 150 °C
0
2
4
6
8
10
12
14
16
60° 90° 120° 180°
8
10
12
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
180
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
160
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
145
140
135
130
30°
125
120
115
0
2
4
6
60°
Peak Half Sine Wave
Forward Current (A)
140
120
100
80
60
Ø
Conduction period
90°
120°
180°
8
10
12
DC
10ETF.. Series
40
16
1
10
100
14
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
200
180°
120°
90°
60°
30°
RMS limit
180
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
14
12
10
8
6
4
2
0
0
2
Peak Half Sine Wave
Forward Current (A)
160
140
120
100
80
60
40
0.01
Ø
Conduction angle
10ETF.. Series
T
J
= 150 °C
4
6
8
10
10ETF.. Series
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94094
Revision: 26-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-10ETF..SPbF Soft Recovery Series
Vishay High Power Products
Instantaneous Forward Current (A)
1000
T
J
= 150 °C
T
J
= 25 °C
100
Fast Soft Recovery
Rectifier Diode, 10 A
2.0
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
Q
rr
- Maximum Reverse
Recovery Charge (µC)
1.6
I
FM
= 8 A
1.2
I
FM
= 5 A
0.8
I
FM
= 2 A
0.4
I
FM
= 1 A
10
10ETF.. Series
1
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
0
40
80
120
160
200
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
5
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
Q
rr
- Maximum Reverse
Recovery Charge (µC)
t
rr
- Maximum Reverse
Recovery Time (µs)
4
3
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
2
1
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.8
10ETF.. Series
T
J
= 150 °C
0.6
I
FM
= 10 A
I
FM
= 8 A
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
20
10ETF.. Series
T
J
= 25 °C
I
FM
= 10 A
I
FM
= 8 A
12
I
FM
= 5 A
I
FM
= 2 A
I
FM
= 1 A
4
t
rr
- Maximum Reverse
Recovery Time (µs)
0.4
I
rr
- Maximum Reverse
Recovery Current (A)
200
16
8
0.2
0
0
40
80
120
160
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94094
Revision: 26-Apr-10
VS-10ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 10 A
25
10ETF.. Series
T
J
= 150 °C
I
FM
= 10 A
Vishay High Power Products
I
rr
- Maximum Reverse
Recovery Current (A)
20
I
FM
= 8 A
15
I
FM
= 5 A
I
FM
= 2 A
10
I
FM
= 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
10
Steady state value
(DC operation)
1
0.1
0.01
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
10ETF.. Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94094
Revision: 26-Apr-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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