VS-80CPH03-F3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 40 A FRED Pt
®
Base
common
cathode
2
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS directive 2002/95/EC
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
DESCRIPTIONS/APPLICATIONS
VS-80CPH03-F3 series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of welding, SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-247AC
2 x 40 A
300 V
1.25 V
34 ns
175 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
per leg
total device
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 133 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
300
40
80
320
- 65 to 175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 40 A
I
F
= 40 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.07
0.94
-
-
75
3.5
MAX.
-
1.25
1.10
10
300
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93270
Revision: 05-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-80CPH03-F3
Vishay Semiconductors
Hyperfast Rectifier,
2 x 40 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 40 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
34
-
41
62
3.3
8.5
68
265
MAX.
-
35
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
0.47
-
0.4
6.0
0.22
-
MAX.
175
0.80
40
-
-
-
12
(10)
g
oz.
kgf cm
(lbf
in)
°C/W
UNITS
°C
80CPH03
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93270
Revision: 05-Oct-10
VS-80CPH03-F3
Hyperfast Rectifier,
2 x 40 A FRED Pt
®
I
F
- Instantaneous Forward Current (A)
1000
1000
T
J
= 175 °C
Vishay Semiconductors
I
R
- Reverse Current (mA)
100
10
1
0.1
0.01
0.001
0.0001
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
0
93270_02
50
100
150
200
250
300
93270_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
C
T
- Junction Capacitance (pF)
100
10
0
93270_03
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
Single
pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.00001
0.0001
0.001
0.01
0.1
1
93270_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93270
Revision: 05-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-80CPH03-F3
Vishay Semiconductors
180
170
160
DC
150
Hyperfast Rectifier,
2 x 40 A FRED Pt
®
90
80
70
60
I
F
= 40 A, T
J
= 125 °C
Allowable Case Temperature (°C)
t
rr
(ns)
Square
wave (D = 0.50)
Rated V
R
applied
50
40
30
20
I
F
= 40 A, T
J
= 25 °C
140
130
120
110
100
0
10
20
30
40
50
60
See
note (1)
10
0
100
93270_07
Average values
1000
93270_05
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
70
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
600
500
400
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
I
F
= 40 A, T
J
= 125 °C
Average Power Loss (W)
60
50
40
30
20
10
0
0
10
20
30
40
50
60
Q
rr
(nC)
RMS limit
300
200
I
F
= 40 A, T
J
= 25 °C
100
0
100
1000
93270_06
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
93270_08
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93270
Revision: 05-Oct-10
VS-80CPH03-F3
Hyperfast Rectifier,
2 x 40 A FRED Pt
®
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
-
-
80
2
C
3
P
4
H
5
03
6
-F3
7
Vishay Semiconductors product
Current rating (80 = 80 A)
3
4
5
6
-
Circuit configuration:
C = Common cathode
-
-
-
P = TO-247AC
H = Hyperfast rectifier
Voltage rating (03 = 300 V)
7
-
Environmental digit:
-F3 = RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-80CPH03-F3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking
www.vishay.com/doc?95223
www.vishay.com/doc?95226
Document Number: 93270
Revision: 05-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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