VS-70CRU02PbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 35 A FRED Pt
®
Base
common
cathode
2
FEATURES
•
•
•
•
•
•
Ultrafast recovery time
Low forward voltage drop
Up to 175 °C operating junction temperature
Common-cathode diodes
Low leakage current
Optimized for power conversion: welding and industrial
SMPS applications
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
• Halogen-free according to IEC 61249-2-21 definition
TO-218
1
3
Anode
2 Anode
2
1 Common
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-218
2 x 35 A
200 V
1.09 V
See Recovery table
175 °C
Common cathode
DESCRIPTION
The VS-70CRU02PbF integrates two state of the art Vishay
Semiconductors ultrafast recovery rectifiers in the
common-cathode configuration. The planar structure of the
diodes, and the platinum doping life-time control, provide a
ultrasoft recovery current shape, together with the best
overall
performance,
ruggedness
and
reliability
characteristics. These devices are thus intended for high
frequency applications in which the switching energy is
designed not to be predominant portion of the total energy,
such as in the output rectification stage of welding
machines, SMPS, DC/DC converters. Their extremely
optimized stored charge and low recovery current reduce
both over-dissipation in the switching elements (and
snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous forward current per diode
Cathode to anode voltage
Single pulse forward current per diode
Maximum power dissipation per module
Operating junction and storage temperatures
SYMBOL
I
F(AV)
V
R
I
FSM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
T
C
= 145 °C
MAX.
35
200
300
67
- 55 to 175
UNITS
A
V
A
W
°C
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
V
BR
, V
R
V
F
TEST CONDITIONS
I
R
= 60 μA
I
F
= 35 A
Forward voltage
I
F
= 35 A, T
J
= 125 °C
I
F
= 35 A, T
J
= 175 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured from A-lead to K-lead 5 mm
from package body
MIN.
200
-
-
-
-
-
-
-
TYP.
-
0.95
0.9
0.85
-
-
50
10
MAX.
-
1.09
1.0
0.9
60
2
-
-
μA
mA
pF
nH
V
UNITS
Document Number: 94509
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-70CRU02PbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 35 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
T
J
= 25 °C
Reverse recovery time
t
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 35 A
V
R
= 100 V
dI
F
/dt = 200 A/μs
TEST CONDITIONS
I
F
= 1 A
V
R
= 30 V
dI
F
/dt = 200 A/μs
MIN.
-
-
-
-
-
-
-
-
TYP.
-
34
26
49
3.7
8.2
48.7
202
MAX.
28
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-218
per diode
both legs
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-
-
-
-
-
1.2
(10)
TYP.
0.8
-
0.2
5.5
0.2
-
MAX.
0.9
0.45
-
-
-
2.4
(20)
g
oz.
Nm
(lbf
in)
K/W
UNITS
70CRU02
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94509
Revision: 09-Feb-11
VS-70CRU02PbF
Ultrafast Rectifier, 2 x 35 A FRED Pt
®
Vishay Semiconductors
I
F
- Instantaneous Forward Current (A)
1000
1000
T
J
= 175 °C
I
R
- Reverse Current (mA)
100
125 °C
10
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
25 °C
0.1
1
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
0.01
0
50
100
150
200
Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Diode)
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Document Number: 94509
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-70CRU02PbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 35 A FRED Pt
®
180
170
160
60
150
140
130
120
110
100
90
80
0
10
20
30
40
50
60
I
F(AV)
-
Average Forward Current (A)
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
50
T
J
= 125 °C
80
70
I
F
= 35 A
V
RR
= 100 V
Allowable Case Temperature (°C)
t
rr
(ns)
40
30
20
10
0
100
T
J
= 25 °C
1000
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
50
600
500
400
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
I
F
= 35 A
V
RR
= 100 V
Average Power Loss (W)
40
RMS limit
Q
rr
(nC)
30
T
J
= 125 °C
300
200
100
0
100
T
J
= 25 °C
20
10
0
0
10
20
30
40
50
60
I
F(AV)
-
Average Forward Current (A)
1000
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94509
Revision: 09-Feb-11
VS-70CRU02PbF
Ultrafast Rectifier, 2 x 35 A FRED Pt
®
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94509
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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