VS-60EPU06PbF, VS-60APU06PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
TO-247AC modified
Cathode
to base
2
TO-247AC
Cathode
to base
2
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
1
Cathode
3
Anode
1
Anode
3
Anode
• Reduced snubbing
• Reduced parts count
VS-60EPU06PbF
VS-60APU06PbF
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC,
TO-247AC modified (2 pins)
60 A
600 V
1.68 V
See Recovery table
175 °C
Single die
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 116 °C
T
C
= 25 °C
Square wave, 20 kHz
TEST CONDITIONS
MAX.
600
60
600
120
- 55 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
V
F
TEST CONDITIONS
I
R
= 100 μA
I
F
= 60 A
Forward voltage
I
F
= 60 A, T
J
= 125 °C
I
F
= 60 A, T
J
= 175 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
TYP.
-
1.35
1.20
1.11
-
-
39
MAX.
-
1.68
1.42
1.30
50
500
-
μA
pF
V
UNITS
Document Number: 94023
Revision: 14-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-60EPU06PbF, VS-60APU06PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode,
60 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
34
81
164
7.4
17.0
300
1394
MAX.
45
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
-
-
-
-
1.2
(10)
TYP.
-
0.2
5.5
0.2
-
MAX.
0.63
K/W
-
-
-
2.4
(20)
60EPU06
60APU06
g
oz.
N
m
(lbf
in)
UNITS
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94023
Revision: 14-Feb-11
VS-60EPU06PbF, VS-60APU06PbF
Ultrafast Soft Recovery Diode,
60 A FRED Pt
®
1000
1000
Vishay Semiconductors
I
R
- Reverse Current (µA)
100
10
I
F
- Instantaneous
Forward Current (A)
T
J
= 175 °C
100
T
J
= 125 °C
1
0.1
0.01
0.001
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.7
0.5
0.3
0.1
0.1
R
1
R
2
τ
2
R
3
τ
3
T
C
Ri (°C/W)
0.06226
0.32503
0.24271
τi
(s)
0.00049
0.01294
0.24310
0.05
T
J
τ
1
Ci =
τi/Ri
Notes:
1. Duty factor D = t
on
/period
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
100
t
on
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94023
Revision: 14-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-60EPU06PbF, VS-60APU06PbF
Vishay Semiconductors
180
Ultrafast Soft Recovery Diode,
60 A FRED Pt
®
300
T
J
= 125 °C
T
J
= 25 °C
I
F
= 30 A
I
F
= 60 A
Allowable Case Temperature (°C)
160
DC
140
120
100
80
See note (1)
60
0
20
40
60
80
100
Square wave (D = 0.50)
80 % rated V
R
applied
250
t
rr
(ns)
200
150
100
50
10
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
140
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
3000
2500
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
2000
T
J
= 125 °C
T
J
= 25 °C
Average Power Loss (W)
120
100
80
60
40
20
0
0
20
40
60
80
100
DC
Q
rr
(nC)
I
F
= 30 A
I
F
= 60 A
1500
1000
500
0
10
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94023
Revision: 14-Feb-11
VS-60EPU06PbF, VS-60APU06PbF
Ultrafast Soft Recovery Diode,
60 A FRED Pt
®
V
R
= 200 V
Vishay Semiconductors
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94023
Revision: 14-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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