VS-60EPS16PbF
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 60 A
Base
cathode
FEATURES
• Designed
and
JEDEC-JESD47
qualified
according
to
2
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-247AC modified
1
Cathode
3
Anode
•
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in
identical package outlines.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-247AC modified
60 A
1600 V
1.07 V
950 A
150 °C
Single die
DESCRIPTION
The VS-60EPS16PbF rectifier high voltage series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
60 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
60
1600
950
1.07
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-60EPS16PbF
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 118 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
60
950
1100
4512
6300
63 000
A
2
s
A
2
s
A
UNITS
Revision: 18-Aug-11
Document Number: 94346
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPS16PbF
www.vishay.com
Vishay Semiconductors
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
30 A, T
J
= 25 °C
60 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.0
1.07
3.96
0.74
0.1
1.0
UNITS
V
m
V
mA
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC modified (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
0.35
40
0.2
6
0.21
6.0 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
60EPS16
Revision: 18-Aug-11
Document Number: 94346
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPS16PbF
www.vishay.com
Vishay Semiconductors
110
150
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
60EPS.. Series
R
thJC
(DC) = 0.35 K/W
140
Ø
100
90
80
70
60
50
40
30
20
10
0
130
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
Ø
120
Conduction period
60EPS.. Series
T
J
= 150 °C
0
20
40
60
80
100
110
90°
60°
30°
120°
180°
40
50
60
70
100
0
10
20
30
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
1000
60EPS.. Series
R
thJC
(DC) = 0.35 K/W
Maximum Allowable Case
Temperature (°C)
900
140
Ø
Peak Half Sine Wave
Forward Current (A)
800
700
600
500
400
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction period
130
30°
60°
90°
120
120°
180°
DC
60EPS.. Series
110
300
0
20
40
60
80
100
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
90
Maximum Average Forward
Power Loss (W)
80
70
60
50
40
30
20
10
0
RMS limit
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
1200
1000
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
800
Ø
600
Conduction angle
60EPS.. Series
T
J
= 150 °C
400
60EPS.. Series
200
0
10
20
30
40
50
60
70
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 18-Aug-11
Document Number: 94346
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPS16PbF
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
100
T
J
= 25 °C
10
T
J
= 150 °C
60EPS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
60EPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Single pulse
Square Wave Pulse Duration (s)
Fig. 1 - Thermal Impedance Z
thJC
Characteristics
Revision: 18-Aug-11
Document Number: 94346
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPS16PbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
60
2
E
3
P
4
S
5
16
6
PbF
7
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration:
E = Single diode
Package:
P = TO-247AC modified
Type of silicon:
S = Standard recovery rectifier
Voltage rating (16 = 1600 V)
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95253
www.vishay.com/doc?95255
Revision: 18-Aug-11
Document Number: 94346
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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