VS-60CPU02-F, VS-60CPU02-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier,
FRED Pt
®
, 2 x 30 A
FEATURES
• Ultrafast recovery time
Base 2
common
cathode
Anode 1
TO-247AC
Anode 2
2
1 Common 3
cathode
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
•
•
•
•
•
DESCRIPTION
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC
2 x 30 A
200 V
1.1 V
30 ns
175 °C
Common cathode
VS-60CPU02... series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
per leg
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, T
C
= 145 °C
T
J
= 25 °C
Rated V
R
, square wave, 20 kHz, T
C
= 137 °C
TEST CONDITIONS
VALUES
200
30
60
300
60
- 65 to 175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
TEST CONDITIONS
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
TYP.
-
0.92
0.75
-
30
100
12
MAX.
-
1.1
0.85
50
300
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 26-Jan-12
Document Number: 94657
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPU02-F, VS-60CPU02-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = - 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
TYP.
30
30
47
3
6.5
42
160
MAX.
36
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
0.6
-
0.5
6.0
0.21
-
MAX.
175
1.0
40
-
-
-
12
(10)
60CPU02
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
1000
1000
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (µA)
100
10
1
0.1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.001
T
J
= 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 26-Jan-12
Document Number: 94657
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPU02-F, VS-60CPU02-N3
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
10
0
50
100
150
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
.
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
40
Allowable Case Temperature (°C)
Average Power Loss (W)
170
160
150
140
130
See note (1)
120
0
5
10
15
20
25
30
35
40
45
Square
wave
(D = 0.50)
Rated
V
R
applied
DC
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
45
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 26-Jan-12
Document Number: 94657
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPU02-F, VS-60CPU02-N3
www.vishay.com
1000
Vishay Semiconductors
70
60
I
F
= 30 A, T
J
= 125 °C
50
I
F
= 30 A, T
J
= 125 °C
Q
rr
(nC)
t
rr
(ns)
40
30
20
10
100
I
F
= 30 A, T
J
= 25 °C
100
I
F
= 30 A, T
J
= 25 °C
1000
10
100
1000
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
(1)
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
Formula used: T
C
= T
J
- (Pd +Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Jan-12
Document Number: 94657
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60CPU02-F, VS-60CPU02-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
60
2
-
-
-
-
-
-
-
C
3
P
4
U
5
02
6
-F
7
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration:
C = Common cathode
Package:
P = TO-247AC (modified)
U = Ultrafast rectifier
Voltage rating (02 = 200 V)
Environmental digit:
-F = RoHS compliant and totally lead (Pb)-free
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
4
5
6
7
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-60CPU02-F
VS-60CPU02-N3
QUANTITY PER T/R
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95223
www.vishay.com/doc?95007
Revision: 26-Jan-12
Document Number: 94657
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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