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50WQ04FNPBF_11

产品描述5.5 A, 40 V, SILICON, RECTIFIER DIODE, TO-252AA
产品类别半导体    分立半导体   
文件大小128KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
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50WQ04FNPBF_11概述

5.5 A, 40 V, SILICON, RECTIFIER DIODE, TO-252AA

5.5 A, 40 V, 硅, 整流二极管, TO-252AA

50WQ04FNPBF_11规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述ROHS COMPLIANT, DPAK-3
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子涂层MATTE TIN
端子位置SINGLE
包装材料PLASTIC/EPOXY
工艺SCHOTTKY
结构SINGLE
壳体连接CATHODE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
应用GENERAL PURPOSE
相数1
最大重复峰值反向电压40 V
最大平均正向电流5.5 A
最大非重复峰值正向电流550 A

文档预览

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VS-50WQ04FNPbF
Vishay Semiconductors
Schottky Rectifier, 5.5 A
Base
cathode
4, 2
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
D-PAK (TO-252AA)
1
Anode
3
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA)
5.5 A
40 V
See Electrical table
40 mA at 125 °C
150 °C
Single die
9 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-50WQ04FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
5 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
5.5
40
340
0.44
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-50WQ04FNPbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 135 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
5.5
550
90
9
1.2
mJ
A
A
UNITS
Document Number: 94233
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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