30TPS... High Voltage Series
Vishay High Power Products
Phase Control SCR, 20 A
DESCRIPTION/FEATURES
2
(A)
The 30TPS... High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level.
TO-247AC
1 (K) (G) 3
PRODUCT SUMMARY
V
T
at 20 A
I
TSM
V
RRM
< 1.3 V
300 A
800/1200 V
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
20 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
20
A
30
800/1200
300
1.3
500
150
- 40 to 125
V
A
V
V/µs
A/µs
°C
UNITS
VOLTAGE RATINGS
PART NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
10
30TPS12
1300
I
RRM
/I
DRM
AT 125 °C
mA
30TPS08
Document Number: 93707
Revision: 12-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
30TPS... High Voltage Series
Vishay High Power Products
Phase Control SCR, 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Maximum holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
√t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
20 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
TEST CONDITIONS
T
C
= 95 °C, 180° conduction half sine wave
VALUES
20
30
250
300
310
442
4420
1.3
12
1.0
0.5
10
100
200
500
150
V/µs
A/µs
mA
A
2
s
A
2
√s
V
mΩ
V
A
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A
Anode supply = 6 V, resistive load
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
µs
UNITS
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93707
Revision: 12-Aug-08
30TPS... High Voltage Series
Phase Control SCR, 20 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Maximum thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
DC operation
R
thJA
R
thCS
Mounting surface, smooth and greased
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
TEST CONDITIONS
VALUES
- 40 to 125
0.8
UNITS
°C
Mounting torque
Marking device
30TPS08
30TPS12
Document Number: 93707
Revision: 12-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
30TPS... High Voltage Series
Vishay High Power Products
Phase Control SCR, 20 A
Maximum Allowable Cas T
e emperature (°C)
30T .. S
PS eries
R
thJC
(DC) = 0.8 °C/ W
Maximum Average On-state Power Loss (W)
130
80
DC
180°
120°
90°
60°
30°
120
Conduction Angle
60
110
30°
100
60°
90°
120°
180°
MS
40 R Limit
Conduction Period
20
30T .. S
PS eries
T
J
= 125°C
0
0
10
20
30
40
50
Average On-state Current (A)
90
0
5
10
15
20
25
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Allowable Case Temperature (°C)
130
Fig. 4 - On-State Power Loss Characteristics
Peak Half S Wave On-state Current (A)
ine
280
30T .. S
PS eries
R
thJC
(DC) = 0.8 °C/ W
120
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
260
Initial T = 125°C
J
@60 Hz 0.0083 s
240
@50 Hz 0.0100 s
220
200
180
160
140
120
1
10
100
Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
110
Conduction Period
100
30°
90
60°
90°
120°
0
5
10
15
180° DC
25
30
35
30T .. S
PS eries
80
20
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
60
50
40
30
20
10
0
0
5
10
15
20
25
30
Average On-state Current (A)
180°
120°
90°
60°
30°
R Limit
MS
Fig. 5 - Maximum Non-Repetitive Surge Current
300
280
260
240
220
200
180
160
140
120
0.01
30T .. S
PS eries
0.1
1
Maximum Non Repetitive S
urge Current
Versus Pulse T in Duration. Control
ra
Of Conduc tion May Not Be Ma intained.
Initial T
J
= 125°C
No Voltage R
eapplied
R
ated V
RRM
R
eapplied
Conduction Angle
30T .. S
PS eries
T
J
= 125°C
Peak Half S
ine Wave On-s
tate Current (A)
Fig. 3 - On-State Power Loss Characteristics
Pulse T
rain Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93707
Revision: 12-Aug-08
30TPS... High Voltage Series
Phase Control SCR, 20 A
Vishay High Power Products
1000
Instantaneous On-state Current (A)
T
J
= 25°C
T
J
= 125°C
100
10
30T .. S
PS eries
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
rans
ient T
hermal Impedance Z
thJC
(°C/ W)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
S
teady S
tate Value
(DC Operation)
S
ingle Pulse
30T .. S
PS eries
0.01
0.0001
0.001
0.01
S
quare Wave Pulse Duration (s
)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
100
Instantaneous Gate Voltage (V)
Rec tangular gate p ulse
a )R ommend ed loa d line for
ec
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)R
ecommend ed load line for
<= 30% rated di/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a )
(b )
T = -10 °C
J
T = 25 °C
J
T = 125 °C
J
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
30T .. S
PS eries
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Document Number: 93707
Revision: 12-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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