VS-30PT100
www.vishay.com
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 30 A
Base
cathode
2
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
F
vs. I
R
trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
TO-247AC modified
1
Cathode
3
Anode
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC modified
30 A
100 V
0.64 V
15 mA at 125 °C
175 °C
Single die
135 mJ
• Designed and qualified according to JEDEC-JESD47
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
30 Apk, T
J
= 125 °C (typical)
Range
CHARACTERISTICS
VALUES
100
0.61
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
VS-30PT100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 156 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 3 A, L = 30 mH
Limited by frequency of operation and time pulse duration so
that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
See fig. 8
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
2200
450
135
I
AS
at
T
J
max.
mJ
A
A
UNITS
Revision: 10-Aug-11
Document Number: 94532
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30PT100
www.vishay.com
Vishay Semiconductors
SYMBOL
30 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
-
-
-
-
-
-
1650
7.5
-
MAX.
0.77
0.9
0.64
0.76
200
15
-
-
10 000
μA
mA
pF
nH
V/μs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Forward voltage drop
V
FM (1)
60 A
30 A
60 A
Reverse leakage current
Junction capacitance
Series inductance
Maximum voltage rate of change
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC modified (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 175
0.8
°C/W
0.25
6
0.21
6 (5)
12 (10)
30PT100
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
Revision: 10-Aug-11
Document Number: 94532
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30PT100
www.vishay.com
Vishay Semiconductors
100
175°C
150°C
125C
1
100°C
75°C
0.1
50°C
0.01
25°C
1000
Reverse Current - I
R
(mA)
10
Instantaneous Forward Current - I
F
(A)
100
Tj = 175°C
0.001
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
Junction Capacitance - C
T
(pF)
10
Tj = 125°C
1000
Tj = 25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.5
D = 0.33
D = 0.25
D = 0.2
D = 0.75
0.1
0.01
Single Pulse
(Thermal Resistance)
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
t
1
, Rectangular Pulse Duration (Seconds)
1E+00
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 10-Aug-11
Document Number: 94532
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30PT100
www.vishay.com
Vishay Semiconductors
30
180
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
175
170
165
160
155
150
145
0
5
10 15 20 25 30 35 40 45
Average Forward Current - I
F
(AV)
(A)
Square wave (D=0.50)
80% rated Vr applied
see note (1)
25
20
15
10
5
0
0
180°
120°
90°
60°
30°
DC
RMS Limit
DC
5
10 15 20 25 30 35 40 45
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
10000
1000
100
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 10-Aug-11
Document Number: 94532
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30PT100
www.vishay.com
Vishay Semiconductors
1000
Avalanche Current (A)
100
Tj = 25°C
Tj = 125°C
10
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
1000
Avalanche Energy (mJ)
100
Tj = 25°C
10
Tj = 125°C
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Revision: 10-Aug-11
Document Number: 94532
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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