30CTT050-F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 15 A
FEATURES
Base 2
common
cathode
•
•
•
•
•
•
•
•
•
•
175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized V
F
vs. I
R
trade off for high efficiency
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
Anode
TO-220AB
Anode
2
1 Common 3
cathode
APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at 15 A at 125 °C
2 x 15 A
50 V
0.54 A
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•
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High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
DC/DC systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
15 Apk, T
J
= 125 °C (typical, per leg)
Range
CHARACTERISTICS
VALUES
50
0.50
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
30CTT050
50
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 146 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 5 A, L = 4.4 mH
Limited by frequency of operation and time pulse duration so
that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
See fig. 8
Following any rated load
condition and with rated
V
RRM
applied
VALUES
15
30
880
220
55
I
AS
at
T
J
max.
mJ
A
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Document Number: 93105
Revision: 01-Oct-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
30CTT050-F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Forward voltage drop per leg
V
FM (1)
30 A
15 A
30 A
Reverse leakage current per leg
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
TYP.
-
-
-
-
-
-
1020
8.0
-
MAX.
0.60
0.72
0.54
0.69
105
8.5
-
-
10 000
µA
mA
pF
nH
V/µs
V
UNITS
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AB
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
- 55 to 175
2.5
R
thJC
DC operation
1.25
R
thCS
Mounting surface, smooth and greased
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
30CTT050
°C/W
UNITS
°C
Mounting torque
Marking device
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 93105
Revision: 01-Oct-09
30CTT050-F
High Performance
Vishay High Power Products
Schottky Generation 5.0, 2 x 15 A
I
F
- Instantaneous Forward Current (A)
100
100
T
J
= 175 °C
I
R
- Reverse Current (mA)
10
T
J
= 150 °C
1
0.1
0.01
0.001
0.0001
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
T
J
= 175 °C
10
T
J
= 125 °C
T
J
= 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
93105_02
0
10
20
30
40
50
93105_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
C
T
- Junction Capacitance (pF)
1000
100
0
93105_03
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
0.1
.
1
93105_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93105
Revision: 01-Oct-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
30CTT050-F
Vishay High Power Products
180
DC
160
High Performance
Schottky Generation 5.0, 2 x 15 A
15
Allowable Case Temperature (°C)
Average Power Loss (W)
12
180°
120°
90°
60°
30°
9
RMS limit
6
DC
3
140
120
Square
wave
(D = 0.50)
80 %
rated
V
R
applied
See note (1)
100
0
93105_05
0
5
10
15
20
25
93105_06
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
I
F(AV)
-
Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
10
100
1000
10 000
93105_07
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 93105
Revision: 01-Oct-09
30CTT050-F
High Performance
Vishay High Power Products
Schottky Generation 5.0, 2 x 15 A
1000
Avalanche Current (A)
100
T
J
= 25 °C
T
J
= 125 °C
10
T
J
= 175 °C
1
1
93105_08
10
100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Avalanche Energy (mJ)
10
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
1
1
93105_09
10
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 93105
Revision: 01-Oct-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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