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30CTQ035SPBF_10

产品描述30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA
产品类别半导体    分立半导体   
文件大小126KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
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30CTQ035SPBF_10概述

30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA

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VS-30CTQ...SPbF, VS-30CTQ...-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
VS-30CTQ...SPbF
VS-30CTQ...-1PbF
FEATURES
175 °C T
J
operation
Center tap TO-220 package
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
The VS-30CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
2 x 15 A
35 V to 45 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
35 to 45
1060
0.56
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-30CTQ035SPbF
VS-30CTQ035-1PbF
35
VS-30CTQ040SPbF
VS-30CTQ040-1PbF
40
VS-30CTQ045SPbF
VS-30CTQ045-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 127 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
1060
265
20
3.0
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 3.0 A, L = 4.40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 94188
Revision: 12-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

30CTQ035SPBF_10相似产品对比

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描述 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 30 A, 40 V, SILICON, RECTIFIER DIODE Fast Switching Characteristic 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA

 
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