VS-25TTS...SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable Phase Control SCR, 16 A
Anode
2
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
D
2
PAK
1
3
Cathode Gate
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
< 1.25 V
300 A
800 V to 1600 V
PRODUCT SUMMARY
V
T
at 16 A
I
TSM
V
RRM
DESCRIPTION
The VS-25TTS...SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
3.5
8.5
16.5
THREE-PHASE BRIDGE
5.5
13.5
25.0
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
16 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
16
25
800 to 1600
300
1.25
500
150
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-25TTS08SPbF
VS-25TTS12SPbF
VS-25TTS16SPbF
Document Number: 94383
Revision: 09-Jun-10
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
1600
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
1600
www.vishay.com
1
10
I
RRM
/I
DRM
,
AT 125 °C
mA
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
VS-25TTS...SPbF High Voltage Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
√t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
16 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
VS-25TTS08,
VS-25TTS12
VS-25TTS16
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
I
L
dV/dt
dI/dt
V
R
= Rated V
RRM
/V
DRM
Anode supply = 6 V,
resistive load, initial I
T
= 1 A
-
100
200
500
150
V/μs
A/μs
TEST CONDITIONS
T
C
= 93 °C, 180° conduction half sine wave
VALUES
TYP.
16
25
300
350
450
630
6300
1.25
12.0
1.0
0.5
10
100
150
mA
A
2
s
A
2
√s
V
mΩ
V
A
MAX.
UNITS
Surface Mountable
Phase Control SCR, 16 A
Holding current
I
H
Anode supply = 6 V, resistive load
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate voltage to trigger
V
GT
V
GD
I
GD
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
μs
UNITS
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94383
Revision: 09-Jun-10
VS-25TTS...SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Soldering temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
SYMBOL
T
J
, T
Stg
T
S
R
thJC
R
thJA
(1)
Vishay Semiconductors
TEST CONDITIONS
VALUES
- 40 to 125
UNITS
°C
For 10 s (1.6 mm from case)
DC operation
240
1.1
°C/W
40
2
0.07
25TTS08S
g
oz.
Marking device
Case style D
2
PAK (SMD-220)
25TTS12S
25TTS16S
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Maximum Allowable Case T
emperature (°C)
Maximum Allowable Case T
empera ture (°C)
130
R
thJC
(DC) = 1.1 °C/ W
120
130
R
thJC
(DC) = 1.1 °C/ W
120
Conduc tion Angle
110
Conduction Period
110
30°
100
60°
90°
120°
180°
90
0
5
10
15
20
Average On-sta te Current (A)
100
90
60°
30°
80
0
5
10
90°
120°
180°
15
20
DC
25
30
Average On-sta te Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Document Number: 94383
Revision: 09-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-25TTS...SPbF High Voltage Series
Vishay Semiconductors
Maximum Averag e On-state Power Loss (W)
25
180°
120°
90°
60°
30°
RMSLimit
ine
Pea k Half S Wave On-sta te Current (A)
Surface Mountable
Phase Control SCR, 16 A
350
20
300
At Any R
ated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
15
250
10
Conduc tion Angle
5
T
J
= 125°C
0
0
4
8
12
16
20
Avera ge On-state Current (A)
200
150
1
10
100
Number Of Equal Amplitude Half Cyc le Current Puls (N)
es
Fig. 3 - On-State Power Loss Characteristics
Maximum Averag e On-state Power Loss (W)
35
30
25
20
RMS Limit
15
10
5
0
0
5
10
15
20
25
30
Avera ge On-sta te Current (A)
Conduction Period
Fig. 5 - Maximum Non-Repetitive Surge Current
400
DC
180°
120°
90°
60°
30°
ine
Peak Half S Wa ve On-state Current (A)
350
300
250
200
150
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Cond uc tion Ma y Not Be Ma inta ined.
Initia l T = 125°C
J
No Voltage Rea pp lied
Rated V
RRM
Reapp lied
T
J
= 125°C
100
0.01
0.1
Pulse T
rain Duration (s)
1
Fig. 4 - On-State Power Loss Characteristics
1000
Instantaneous On-state Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
T
J
= 25°C
10
T
J
= 125°C
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94383
Revision: 09-Jun-10
VS-25TTS...SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A
T
ransient T
hermal Imped anc e Z thJC (°C/W)
10
Vishay Semiconductors
S
teady S
tate Value
(DC Opera tion)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
ingle Pulse
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
S
quare Wave Pulse Duration (s)
Fig. 8 - Gate Characteristics
100
Instantaneous Gate Voltage (V)
R tangular gate pulse
ec
a)R ommended load line for
ec
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs tp >= 6 µs
,
b)Rec ommended load line for
<= 30% rated d i/ dt: 10 V, 65 ohms
10
tr = 1 µs tp >= 6 µs
,
(1)
(2)
(3)
(4)
(a )
(b)
PGM = 40 W, tp = 1 ms
PGM = 20 W, tp = 2 ms
PGM = 8 W, tp = 5 ms
PGM = 4 W, tp = 10 ms
T = -10 °C
J
T = 25 °C
J
J
T = 125 °C
1
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94383
Revision: 09-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
