VS-20MQ100-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
• Small foot print, surface mountable
• High frequency operation
SMA
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
SMA
2A
100 V
0.72 V
1 mA at 125 °C
150 °C
Single die
1.0 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-20MQ100-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
2 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
2
100
120
0.72
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-20MQ100-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
TEST CONDITIONS
50 % duty cycle at T
L
= 113 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
50 % duty cycle at T
L
= 116 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH
Following any rated
load condition and with
rated V
RRM
applied
VALUES
2.1
A
2
120
A
30
1.0
0.5
mJ
A
UNITS
I
F(AV)
Revision: 22-Aug-11
Document Number: 93361
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20MQ100-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
2A
1.5 A
Maximum forward voltage drop
See fig. 1
V
FM (1)
1A
2A
1.5 A
1A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
I
RM
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz
Measured lead to lead 5 mm from package body
Rated V
R
V
R
= Rated V
R
T
J
= 125 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
0.91
0.85
0.78
0.72
0.68
0.63
0.1
1
0.52
78.4
38
2.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJA
DC operation
TEST CONDITIONS
VALUES
- 55 to 150
80
0.07
0.002
UNITS
°C
°C/W
g
oz.
2J
Case style SMA (similar D-64)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 22-Aug-11
Document Number: 93361
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20MQ100-M3
www.vishay.com
Vishay Semiconductors
100
10
Junction Capacitance - C
T
(pF
)
T
J
= 25°C
10
Instantaneous Forward Current - I
F
(A)
1
T
J
= 150°C
T
J
= 125°C
1
T
J
= 25°C
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
160
Allowable case temperature (°C)
150
140
130
120
110
100
90
80
70
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average forward current- I
F(AV)
(A)
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave (D=0.50)
rated Vr applied
see note (1)
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
3
Average power loss (Watts)
1
T
J
= 150°C
Reverse Current - I (mA)
0.1
125°C
100°C
0.01
75°C
50°C
2.5
2
1.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
R
0.001
RMS Limit
DC
1
0.5
0
0.0001
25°C
0
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
0
0.5
1
1.5
2
2.5
3
Average forward current- I
F(AV)
(A)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 22-Aug-11
Document Number: 93361
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20MQ100-M3
www.vishay.com
100
Non - Repetitive Surge Current - I
FSM
(A)
Vishay Semiconductors
Tj = 25˚C
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
-
-
-
-
-
-
20
2
M
3
Q
4
100
5
-M3
6
Vishay Semiconductors product suffix
Current rating
M = SMA
Q = Schottky “Q” series
Voltage rating (100 = 100 V)
Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-20MQ100-M3/5AT
PREFERRED PACKAGE CODE
5AT
MINIMUM ORDER QUANTITY
7500
PACKAGING DESCRIPTION
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95400
www.vishay.com/doc?95403
www.vishay.com/doc?95404
Revision: 22-Aug-11
Document Number: 93361
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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